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Chin J Mater Res  1998, Vol. 12 Issue (4): 369-374    DOI:
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THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
XIE Song; MENG Guangyao; PENG Dingkun (Department of Materials Science and Engineering)University of Science and Technology of China; Hefei 230026)
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XIE Song; MENG Guangyao; PENG Dingkun (Department of Materials Science and Engineering)University of Science and Technology of China; Hefei 230026). THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION. Chin J Mater Res, 1998, 12(4): 369-374.

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Abstract  By microwave plasma enhanced chemical vapor deposition we prepared highly (002) oriented AIN nanometer thin film on Si(111) substrate. The effect on sudece morphology. film structure and deposition rate at various deposition conditions had been researched
Key words:  microwave plasma      chemical vapor deposition      AIN film      growth mechanism     
Received:  25 August 1998     
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