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THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION |
XIE Song; MENG Guangyao; PENG Dingkun (Department of Materials Science and Engineering)University of Science and Technology of China; Hefei 230026) |
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Cite this article:
XIE Song; MENG Guangyao; PENG Dingkun (Department of Materials Science and Engineering)University of Science and Technology of China; Hefei 230026). THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION. Chin J Mater Res, 1998, 12(4): 369-374.
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Abstract By microwave plasma enhanced chemical vapor deposition we prepared highly (002) oriented AIN nanometer thin film on Si(111) substrate. The effect on sudece morphology. film structure and deposition rate at various deposition conditions had been researched
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Received: 25 August 1998
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1W.Zhang ,Y.Someno,M.Sasaki T Hirai J.Grystal GrowtL 130 305(1993) 2S Xie, X.Liu, G Y.Meng Chem J Chinese Univ 17, 838(199) 3G Y Meng N Azema, B Cros,J.Durand L.Cot,J Crystal Growth, 129, 610(1993) 4 F.Hasegawa,T.Takahashi, K Kubo, Y Nannichi; Japan J. Appl Phys. 26 1555(1987)% |
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