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| Doping effect of rare-earth elements in BaTiO3-R2O3-MgO dielectrics |
| LI Bo |
| 电子科技大学 微电子与固体电子学院 电子薄膜与集成器件国家重点实验室 |
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Cite this article:
LI Bo. Doping effect of rare-earth elements in BaTiO3-R2O3-MgO dielectrics. Chin J Mater Res, 2008, 22(4): 433-438.
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Abstract The doping effect of rare-earth elements was systematically investigated in BaTiO3-R2O3-MgO (R = La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Y, Er, Yb) dielectrics. Due to the different site occupancy and compensation model, the smaller-ions show higher insulation resistivity compared with the larger-ions. SEM-EDS indicate that the diffusivity and solubility of rare-earth ions in BaTiO3 decrease as the ionic radius decreases, so the larger-ions distribute uniformly in BT grains and promote grain-growth, while the smaller-ions stay dominantly in the shell and boundary regions and form core-shell-structured fine grains. Moreover the smallest ions segregate along the triple point and the secondary phase R2Ti2O7 appears. The results show the larger-ion-doped samples exhibit single-peak ε–T, but the smaller-ion-doped samples present double-peak ε–T and improve stability of ΔC/C–T meeting X8R code.
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Received: 27 August 2007
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