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| THE PHASE TRANSITION AND PHOTOELECTRONIC PROPERTIES OF NiO_x THIN FILMS |
| FU Zhuxi; LIN Bixia; HAN Xianzhe; LIAO Guihong (University of Science and Technology of China) |
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Cite this article:
FU Zhuxi; LIN Bixia; HAN Xianzhe; LIAO Guihong (University of Science and Technology of China). THE PHASE TRANSITION AND PHOTOELECTRONIC PROPERTIES OF NiO_x THIN FILMS. Chin J Mater Res, 1997, 11(2): 158-162.
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Abstract The thin films of NiOx, which thickness smaller than 0.1μm,were prepared by reactive sputtering of a Ni target with a mixed gas of argon and oxygen. The samples then were heated in air. It was found that the transmissivity and conductivity of the samples
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Received: 25 April 1997
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