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REVIEW OF DIAMOND FILM AND HIGH-FIDILITY ACOUSTIC DIAPHRAGM MATERIALS |
ZHANG Zhiwei; LI RongZhi; ZHU Hesun (Beijing Institute of Technology) |
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Cite this article:
ZHANG Zhiwei; LI RongZhi; ZHU Hesun (Beijing Institute of Technology). REVIEW OF DIAMOND FILM AND HIGH-FIDILITY ACOUSTIC DIAPHRAGM MATERIALS. Chin J Mater Res, 1994, 8(4): 330-336.
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Abstract The research works on loudspeaker vibration films and their developments were reviewed. Especially reviewed the diaphragms made by Diamond Film (DF) and Diamond Like Carbon (DLC). The methods and techniques for the preparation of diaphragms on tweeter mad
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Received: 25 August 1994
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1曹水轩,沙家正编著.扬声器及其系统.南京:江苏科学技术出版社,1991:1222黄贵周著.音响器材.台北:三民书局,1980:933张绍高译.扬声器系统(下册)(日).北京:国防工业出版社,1986:1144木下克己.微细加工技术,1990;2(3):9655YOSHIOKAT,IMAIO,OHARAHetal.SurfaceandCoatingsTechnology,1988;36:3116芳.电子材料,1989;8:97郑昌琼,冉均国.材料科学与工程,1992;2:458蒋翔六主编.金刚石薄膜研究进展.北京:化学工业出版社,1991:19Editorial.MicroelectronicsManufacturingTechnology,1991;6:14 10GOVERNMENTCONCERNTRATES,Chem&Engg.News1990;68(21):2411王国栋译.压电与声光,1991;2:9212戚立昌等.微细加工技术,1990;2//3:3113ThomasA.Carbon,1990;28(6):77414吴琼.电子元件与材料,1990;9(2):5215CappelliMA.JMaterRes.1990;5(11):232616SharmaSC,ChourasiaAR.MaterRes,1990;5(11):242417RameshamR,JaworskeDA,BaughW.JMaterRes,1990;5(11):127818张以忱,杨乃恒.真空,1991;1:3719HolidayP,Dehbi-AlaouiA,MatthewsA.MaterialsScienceForum,1992;(102—104):64320 陈仑译.磨料磨具与磨削,1987;3(39):121阎震,施海良等.高技术通讯,1991;1(5):1722孙以宁,郭晚士等.真空与低温,1991;10(3):4223侯立,陶增六,戚立昌.人工晶体,1988;17(1):7024KuoCT,HsuSE.JMaterRes,1990;5(11):251525ParkSS,LeeJY.JAppPhys,1991;69(4):261826陈国平.电子器件,1988;1:127毛友德.刘声雷,激光技术,1991;15(5):128MirtichMJ,SwecDS.ThinSolidFilms,1985;131:24529NishikawaS,etal.JApplPhys,1986;25:51130华子兴.电声技术,1992;5:531 张桂昌.电声技术,1993;4:1332 刘声雷,毛友德.电声技术,1994;1:1533 陆正伟.电声技术.1994;1:4134Yamazaki.USPat5015494,199135LuZP,StachowiczL,KongP,etal.PlasmaChemistryandPlasmaProcessing,1991:11(3):38736Soon—SupPark,Jai—YoungLee.JApplPhys,1991;69(4):261837SpearKE,JAmerCeraSoc,1988;72:17138YugoS,KimuraT,KannaiH,etal.In:EminnD,AselageTL.WoodCeds.NovelRefractorSemiconductors,Pittsburgh,PA,MaterialsResearchSociety,1987:32739MatsumotoS.InorganicMater,1984;39:2940ChangCP,FlammDL,IbbotsonDEetal.JApplPhys,1988;63:177441MitsudaK,KojimaY,YoshidaTetal.J MaterSci,1987;22:155742P-OJoffreau,HaubnerR,LuxB.JRefractoryHardMater,1988;7:18643MeilunasR,WongMS,ShengKCetal.ApplPhysLett,198954:220444BeltonDN,HarrisSJ,SchmiegSJetal.ApplPhysLett,1989;54:41645HirabayashiK.TaniguchiY.ApplPhysLett,1988;53:181546AlbanoEV,BinderK,HeermannDW,etal.SurfSci.1989;223:15147AlbanoEV,MartinHO.PhysRev,1987;B35:782048AlbanoEV,MartinHO.PhysRev,1988;B38:793249FrenklachM,SpearKE.JMaterRes.1988;3:13350CressieE,Holcombe,Jr.etal.USPat4228142.198051李荣志,朱鹤孙,张志伟.中华人民共和国专利号ZL93208992.552张志伟,李荣志,朱鹤孙.高技术通讯,1993年8月53于晨,杨杰,范玉殿,陶琨.材料科学进展.1993;71(6):521? |
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