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THE STUDY OF OPTIMUM PROCESS CONDITION OF Hg SENSITIZATION PHOTO-CHEMICAL VAPOR DEPOSITION SiO_2FILMS |
JING Junhai SUN Qing (University of Electronics Science and Technology of Xi'an) |
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Cite this article:
JING Junhai SUN Qing (University of Electronics Science and Technology of Xi'an). THE STUDY OF OPTIMUM PROCESS CONDITION OF Hg SENSITIZATION PHOTO-CHEMICAL VAPOR DEPOSITION SiO_2FILMS. Chin J Mater Res, 1991, 5(2): 164-168.
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Abstract This paper discussed the principle and method of Hg sensitizationphoto-chemical vapor deposition films,studied optimum process condition of fabricationSiO_2 films.The results show that optimum process conditions:substrate temperature isabout 200℃,depositi
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Received: 25 April 1991
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