ELECTROCHEMICAL PASSIVATION OF MONOCRYSTAL SILICON

Chin J Mater Res

1989, Vol. 3

Issue (6): 549-552 DOI:

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ELECTROCHEMICAL PASSIVATION OF MONOCRYSTAL SILICON

YANG Jun DENG Xunnan XU Liumei (Shanghai University of Science and Technology)

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YANG Jun DENG Xunnan XU Liumei (Shanghai University of Science and Technology). ELECTROCHEMICAL PASSIVATION OF MONOCRYSTAL SILICON. Chin J Mater Res, 1989, 3(6): 549-552.

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Abstract Thin film of silicon dixide can be grown on the surface of sili-con by electrochemical oxidation at room temperature.The electrolyte for pa-ssivation may be organic solution or pure water.The thickness of oxidicfilm is changed by controlling the voltage.T

Key words: monocrystal silicon passivation passive film

Received: 25 December 1989

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1 谢孟贤,刘国维.半导体工艺原理.北京:国防工业出版社,1980:上册235;下册,103
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