Fabrication and Temperature Sensing Performance of Ho3+/Yb3+ Co-doped α-Si3N4 Branched Nanowires

doi:10.11901/1005.3093.2026.099

Chinese Journal of Materials Research

2026, Vol. 40

Issue (7): 543-552 DOI: 10.11901/1005.3093.2026.099

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Fabrication and Temperature Sensing Performance of Ho³⁺/Yb³⁺ Co-doped α-Si₃N₄ Branched Nanowires

ZHOU Minghan¹, CHEN Shuanglong¹, WANG Qiushi¹(

), WANG Xuejiao¹, LIU Cailong²

^1.College of Physical Science and Technology, Bohai University, Jinzhou 121013, China
^2.College of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252000, China

Cite this article:

ZHOU Minghan, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong. Fabrication and Temperature Sensing Performance of Ho³⁺/Yb³⁺ Co-doped α-Si₃N₄ Branched Nanowires. Chinese Journal of Materials Research, 2026, 40(7): 543-552.

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Abstract

Herein, Ho³⁺/Yb³⁺ co-doped Si₃N₄ branched nanowires (Si₃N₄:Ho³⁺/Yb³⁺) were fabricated via plasma arc technique, and then characterized by means of X-ray diffraction, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. Results indicate that the branched nanowires comprise a main trunk with multiple branches growing in parallel along both sides, while the Ho³⁺ and Yb³⁺ ions were successfully incorporated into the branched nanowire structure of Si₃N₄. Under 980 nm laser excitation, the Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires exhibit three distinct up-conversion (UC) luminescence peaks: green emission at 540 nm corresponds to the (⁵F₄,⁵S₂→⁵I₈) transition of Ho³⁺; while the red emissions at 660 nm and 756 nm are attributed to the (⁵F₅→⁵I₈) and (⁵F₄→⁵I₇) transitions, respectively. Based on the UC emission intensity ratio and decay lifetime, the optical temperature sensing performance of the Ho³⁺/Yb³⁺co-doped Si₃N₄ branched nanowires was systematically investigated over the temperature range of 298-558 K. It follows that the method for temperature measurement based on the I₅₄₀/I₆₆₀ intensity ratio achieves a maximum relative sensitivity of 2.13% K^-1. Meanwhile, the relative sensitivity based on the decay lifetime of the 540 nm emission peak reaches 1.10% K^-1. The above findings prospect the great potential in application of the Ho³⁺/Yb³⁺ co-doped Si₃N₄ branched nanowires for optoelectronic devices, biomedicine, high-precision temperature sensing, and laser technologies.

Key words: inorganic non-metallic materials up-conversion plasma arc method silicon nitride temperature sensing

Received: 19 January 2026

ZTFLH:

O482.31

Fund: National Key Research and Development Program of China(2023YFA1406200);Liaoning Revitalization Talents Program(XLYC2403017);General Program of the Education Department of Liaoning Province(JYTMS20231627)

Corresponding Authors: WANG Qiushi, Tel: (0416)3400137, E-mail: wang_jiu_jiu@foxmail.com

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	ZHOU Minghan
	CHEN Shuanglong
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	WANG Xuejiao
	LIU Cailong

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https://www.cjmr.org/EN/10.11901/1005.3093.2026.099 OR https://www.cjmr.org/EN/Y2026/V40/I7/543

Fig.1 XRD patterns of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires and pure Si₃N₄ (a), and EDS analysis diagram of Si₃N₄:Ho³⁺/Yb³⁺ (b)

Fig.2 Proposed structural model of α-Si₃N₄: Ho³⁺/Yb³⁺

Fig.3 XRS full spectra of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires (a) and high-resolution XPS profiles of Si 2p (b), N 1s (c), Ho 4d (d) and Yb 4d (e)

Fig.4 SEM images of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires (a, b), TEM image of branched nanowires (c), inset presents its corresponding SAED pattern (d) and HRTEM image of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowire (e)

Fig.5 Up-conversion emission spectrum of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires under 980 nm laser excitation

Fig.6 Up-conversion fluorescence emission spectra of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires under 980 nm laser excitation of different powers (a), and bilogarithmic relationship between excitation power and integral light intensity (b)

Fig.7 Energy level transition diagram

Fig.8 Up-conversion emission spectra of Si₃N₄:Ho³⁺/Yb³⁺ branched nanowires at different temperatures (a), changes in the intensity of each emission peak with temperature (b), the ratio of the emission peak at 660 nm to the emission peak at 540 nm as a function of temperature and the fitting curve (c), and the calculated relative sensitivity (d)

Table 1 Temperature sensing performance based on the fluorescence intensity ratio (FIR) for rare-earth ions co-doped in different host materials

Fig.9 Decay curves of Si₃N₄:Ho³⁺/Yb³⁺ branched nano-wires at different temperatures under 980 nm excitation for emission peaks at 540 nm

Table 2 Temperature sensing performance based on fluorescence lifetime for rare-earth ions co-doped in different host materials

Fig.10 540 nm emission peak (a) fluorescence lifetime and temperature double reciprocal function and fitted curve, the relative sensitivities of the peaks are calculated in (b), respectively

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