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| The High Temperature Oxidation Behavior of Reaction–bonded Porous Silicon Carbide Ceramics |
| ZHENG Chuanwei; YANG Zhenming; ZHANG Jinsong |
| Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110016 |
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Cite this article:
ZHENG Chuanwei YANG Zhenming ZHANG Jinsong. The High Temperature Oxidation Behavior of Reaction–bonded Porous Silicon Carbide Ceramics. Chin J Mater Res, 2010, 24(1): 103-107.
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Abstract The oxidation behavior of reaction–bonded porous silicon carbide (RPSC) ceramics with different open porosities was studied in dry oxygen between 1200 and 1500oC. RPSC ceramics exhibited a rapid mass increase in the initial stage of oxidation and a slow mass increase in the following oxidation. This oxidation behavior of RPSC is more plausible to be represented by an asymptotic law rather than the parabolic law for dense SiC. The porosity of RPSC led to dominant internal oxidation mass gain in pore channels at the beginning of oxidation besides surface oxidation. The oxidation mass gain was proportional to the amount of the porosity. As the oxide growth rate near the pore mouth was much faster than the rate of oxygen supply to the interior of the pores, the pores were blocked by silica rapidly, which subsequently prevented the further oxidation of the inner pores.
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Received: 07 September 2009
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| 1 R.J.Ciora, B.Fayyaz, P.K.T.Liu, V.Suwanmethanond, R.Mallada, M.Sahimi, T.T.Tsotsis, Preparation and reactive applications of nanoporous silicon carbide membranes, Chemical Engineering Science, 59(22–23), 4957(2004)
2 E.Passalacqua, S.Freni, F.Barone, Alkali resistance of tape–cast SiC porous ceramic membranes, Materials Letters, 34(3–6), 257(1998)
3 ZHU Xinwen, JIANG Dongliang, TAN Shouhong, Preparation of silicon carbide reticulated porous ceramics, Materials Science and Engineering A, 323(1–2), 232(2002)
4 SHI Limin, ZHAO Hongsheng, YAN Yinghui, TANG Chunhe, Fabrication of high purity porous SiC ceramics using coat mix process, Materials Science and Engineering: A, 460–461, 645(2007)
5 P.J.Jorgensen, M.E.Wadsworth, I.B.Cutler, Oxidation of silicon carbide, Journal of the American Ceramic Society, 64, 613(1959)
6 D.Das, J.Farjas, P.Roura, Passive oxidation kinetics of SiC microparticles, Journal of the American Ceramic Society, 87(7), 1301(2004)
7 J.A.Costello, R.E.Tressler, Oxidation kinetics of hot–pressed and sintered alpha–SiC, Journal of the American Ceramic Society, 64, 327(1981)
8 J.A.Costello, R.E.Tressler, Oxidation kinetics of silicon carbide crystals and ceramics: I, in dry oxygen, Journal of the American Ceramic Society, 69(9), 674(1986)
9 T.Narushima, T.Goto, T.Hirai, High temperature passive oxidation of chemically vapor deposited silicon carbide, Journal of the American Ceramic Society, 72, 1386(1989)
10 C.E.Ramberg, G.Cruciani, K.E.Spear, R.E.Tressler, Passive oxidation kinetics of high purity silicon carbide from 800oC to 1100oC, Journal of the American Ceramic Society, 79, 2897(1996)
11 R.C.A.Harris, Oxidation of 6H–alpha silicon carbide platelets, Journal of the American Ceramic Society, 58, 7(1975)
12 V.Presser, K.G.Nichel, Silica on silicon carbide, Critical Reviews in Solid State and Materials Sciences, 33(1), 1(2008)
13 U.R.Evans, The Corrosion and Oxidation of Metals (London, Edward Arnolk, 1960) p.834
14 F.Porz, F.Th¨ummler, Oxidation mechanism of porous silicon nitride, Journal of Materials Science, 19, 1283(1984)
15 N.S.Jacobson, Corrosion of silicon–based ceramics in combustion environments, Journal of the American Ceramic Society, 76(1), 3(1993)
16 K.L.Luthra, Some new perspectives on oxidation of silicon carbide and silicon nitride, Journal of the American Ceramic Society, 74(5), 1095(1991) |
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