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Chinese Journal of Materials Research  2018, Vol. 32 Issue (6): 409-414    DOI: 10.11901/1005.3093.2018.157
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Preparation of Cu2ZnSnS4 Thin Film Solar Cells by Cyclically and Sequentially Sputtering Three Sulfide-targets
Qiang WANG, Ruiting HAO(), Qichen ZHAO, Sijia LIU
College of Energy and Environmental Sciences, Yunnan Normal University, Kunming 650500, China
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Qiang WANG, Ruiting HAO, Qichen ZHAO, Sijia LIU. Preparation of Cu2ZnSnS4 Thin Film Solar Cells by Cyclically and Sequentially Sputtering Three Sulfide-targets. Chinese Journal of Materials Research, 2018, 32(6): 409-414.

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Abstract  

Layered films of Cu2ZnSnS4 (CZTS) thin films were prepared by sequentially and cyclically sputtering three targets of ZnS, CuS and SnS, which then were annealing at 360℃ for 30 min, afterwards they were sulfurized in a graphite box with 0.5 g sulfur powder at 600℃ for desired period of time. For three cycles of sputtering (T3), the prepared CZTS thin layered film is dense and compact with smooth surface, uniform crystal-grain size and a band gap of 1.5 eV. The solar cell assembled by the T3 ZTS film has better performance with the following parameters: the open circuit voltage 623 mV and the short-circuit current density 11.79 mA/cm2, respectively. Correspondingly, the photoelectric conversion efficiency could reach 2.93%.
Key words:  synthesizing and processing technics for materials      periodic sputtering      CZTS      high temperature sulfurization     
Received:  06 February 2018     
ZTFLH:  TM615  
Fund: Supported by National Natural Science Foundation of China (Nos. 61774130, 11474248, 61176127 ＆ 61006085), Key Program for International S & T Cooperation Projects of China (No. 2011DFA62380), and the Ph.D. Programs Foundation of Ministry of Education of China (No. 20105303120002)
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Articles by authors
Qiang WANG
Ruiting HAO
Qichen ZHAO
Sijia LIU

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https://www.cjmr.org/EN/10.11901/1005.3093.2018.157     OR     https://www.cjmr.org/EN/Y2018/V32/I6/409

Stacking sequence Atomic component/% Atomic ratio
Cu Zn Sn S Cu/（Zn+Sn） Zn/Sn S/(Cu+Zn+Sn)
T1 21.28 14.65 12.85 51.22 0.77 1.14 1.05
T2 20.89 14.01 12.31 52.78 0.79 1.14 1.06
T3 22.01 13.43 12.10 52.47 0.86 1.11 1.10
Table1  EDS test results of thin film samples were prepared by periodic variation
Fig.1  XRD diffraction patterns of thin film samples with T1, T2 and T3 cycles
Periodicity 2θ/(°) FWHM/(°) D/nm
T1 28.481 0.335 0.31313
T2 28.460 0.335 0.31336
T3 28.460 0.332 0.31336
Table 2  Structural parameters of the 112 crystal planes of CZTS samples were obtained for T1, T2 and T3 cycles
Fig.2  Raman scattering spectra of thin film samples prepared by T1, T2 and T3 cycles
Fig.3  Suface SEM images of thin film samples prepared by T1, T2 and T3 cycles
Fig.4  Cross-section SEM images of CZTS films prepared by (a) T1, (b) T2 and (c) T3 cycles
Fig.5  Plots of (αhν)2 vs. (hν) of CZTS films prepared by T1, T2 and T3 cycles
Fig.6  Illuminated J-V characteristics (AM1.5, 100 mW/cm2, 300 K) of CZTS film solar cells
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