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Cite this article:
. . Chin J Mater Res, 2007, 21(4): 371-376.
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Received: 01 January 1900
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1 S.L.King,J.G.E.Gardeniers,I.W.Boyd,Pulsed-laser de- posited ZnO for device application,Appl.Surf.Sci., 96,,,98,811(1996)
2 T.V.Srikan,D.R.J.Clarked,On the optical band gap of zinc oxide,Appl.Phys.,83(10),447(1998)
3 W.Water,S.Y.Chu,Y.D.Juang,S.J.Wu,Li_2CO_3-doped ZnO films prepared by RF magnetron sputtering tech- nique for aconstic device application,Materials Letters, 57(4),998(2002)
4 K.Iwata,H.Tampo,A.Yamada,Growth of ZnO and device applications,Appl.Surf.Sci.,244(14),504(2005)
5 K.Keis,L.Vayssieres,S.E.Lindquist,Nanostructured ZnO electrodes for photovoltaic applications,Nanostructured Materials,12(1-4),487(1999)
6 J.G.E.Gardeniers,Z.M.Rittersma,G.J.Burger,Preferred orientation and piezoelectricity in sputtered ZnO films,J. Appl.Phys,83(12),7844(1998)
7 K.Tominaga,T.Murayama,N.Umezu,I.Mori,T.Ushiro, T.Moriga,I.Nakabayashi,Properties of films of multilay- ered ZnO:Al and ZnO deposited by an alternating sput- tering method,Thin Solid Films,343-344,160(1999)
8 W.Water,S.Y.Chu,Physical and structural properties of ZnO sputtered films,Materials Letters,55,67(2000)
9 P.F.Carcia.R.S.McLean,M.H.Reilly,J.G.Nunes,Trans- parent ZnO thin-film transistor fabricated by RF mag- netron sputtering,Appl.Phys.Lett.,82(70),1117(2003)
10 G.A.Mohamed,A.B.Abd El-Moiz,M.Rashad,Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method,Physica B,370, 158(2005)
11 Y.Takashi,S.Tadashi,K.Akira,Characterization of ZnO piezoelectric films prepared by RF planar-magnetron sputtering,J.Appl.Phys.,51(6),3113(1980)
12 K.S.Kim,H.W.Kim,N.H.Kim,Structural characteriza- tion of ZnO films grown on SiO_2 by the RF magnetron sputtering,Physica B,334,343(2003)
13 H.W.Kim,N.H.Kim,Structural studies of room- temperature RF magnetron sputtered ZnO films under different RF powered conditions,Materials Science and Engineering B,103,297(2003)
14 B.J.Jin,S.H.Bae,S.Y.Lee,Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition,Materials Science and Engineer- ing,71(1～3),301(2000)
15 F.Chaabouni,M.Abaab,B.Rezig,Effect of the substrate temperature on the properties of ZnO films grown by RF magnetron sputtering,Materials Science and Engineering B,109,236(2004)
16 Y.C.Sheng,W.Walter,T.L.Jih,Ihfluence of postdeposi- tion annealing on the properties of ZnO films prepared by RF magnetron sputtering,Journal of the European Ce- ramic Society.,23,1593(2003)
17 LU Jianguo,YE Zhizheng,HUANG Jinyun,ZHAO Binghui,WANG Lei,Influence of postdepo~ition anneal- ing on crystallinity of zinc oxide films,Chinese Journal of Semiconductors,24(7),729(2003) (吕建国，叶志镇，黄靖云，赵炳辉，汪雷，退火处理对ZnO薄膜结晶性能的影响，半导体学报，24(7)，729(2003))
18 JIANG Shenglin,LIN Ruzhan,ZENG Yike,LIU Meidong, Effect of annealing temperature on the electrical proper- ties of low voltage ZnO-based ceramic film,Chinese Jour- nal of Materials Research,19(1),102(2005) (姜胜林，林汝湛，曾亦可，刘梅冬，退火温度对ZnO陶瓷薄膜低压压敏特性的影响，材料研究学报，19(1)，102(2005)
19 S.Muthukumar,C.R.Gorla,N.W.Emanetoglu,S.Liang, Y.Lu,Control of morphology and orientation of ZnO thin films grown on SiO_2/Si substrates,Journal of Crystal Growth,225,197(2001)
20 I.Yasuhiro,N.Takashi,M.Kenji,T.Waichi,The effects of deposition conditions on the structural properties of ZnO sputtered films on sapphire substrates,Appl.Surf.Sci., 169-170,512(2001)@ |
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