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GROWTH OF DIAMOND FILMS BY LOWER PRESSURE PHASE |
ZHANG Baojun;HUANG Suiyang;CANG Fengbo;CHANG Jingyi(China Building Materials Academy) |
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Cite this article:
ZHANG Baojun;HUANG Suiyang;CANG Fengbo;CHANG Jingyi(China Building Materials Academy). GROWTH OF DIAMOND FILMS BY LOWER PRESSURE PHASE. Chin J Mater Res, 1990, 4(3): 269-272.
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Abstract Vacuum evaporating device which was designed by us is used to grow dia-mond films on the substrate of silicon single crystals from a mixture of CH_4 and H_2 gasesat lower pressure by hot-filament CVD method.The results of X-ray diffraction,Ramanspectrum a
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Received: 25 June 1990
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1 Sawale A,Inuzuka Tadad.Thin Soild Films,1986;137:89 2 Mutsukazu Kamo,Yoichiro Sato,Matsumoto et al,Journal of Crystal Growth,1983;62:642 3 Aisenberg S,Chabot R.J Appl phys,1971;42:2953 4 Holland L,Ojha SM.Thin Soild Films,1979;58:107 5 Seiichiro Matsumoto.Journal of Materials Science Letters,1985;4:600 6 Has Z,Mitura S,Clapa M.Thin soild Films,1986;136:161 7 Whitmell DS,Willianson R.Thin Soild Films,1976;25:255 8 陈天鹏,李云飞等.人工晶体,1989;3:78g |
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