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| PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING |
| WU Dawei; ZHANG Zhihong; LUO Hailin; GUO Huaixi; FAN Xiangjun (Correspondent: WU Dawei; Department of Physics; Wuhan University; Wuhan 430072) |
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Cite this article:
WU Dawei; ZHANG Zhihong; LUO Hailin; GUO Huaixi; FAN Xiangjun (Correspondent: WU Dawei; Department of Physics; Wuhan University; Wuhan 430072). PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING. Chin J Mater Res, 1997, 11(2): 207-208.
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Abstract ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditi
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Received: 25 April 1997
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