Chin J Mater Res  1998, Vol. 12 Issue (6): 655-658    DOI:

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ON PINNING PHENOMENON OF PLT FERROELECTRIC THIN FILMS CAUSED BY EXCESS Pb

SONG Zhitang;REN Wei;ZHANG Liangying;YAO Xi(State Key Laboratory of innctional materials for Information; Shanghai institute ofMetallurpy; The Chinese Academy of Sciences; Shanghai 200050)(Electronic Materials Research Laborutory; Xi'an Jiaotong Universit

SONG Zhitang;REN Wei;ZHANG Liangying;YAO Xi(State Key Laboratory of innctional materials for Information; Shanghai institute ofMetallurpy; The Chinese Academy of Sciences; Shanghai 200050)(Electronic Materials Research Laborutory; Xi'an Jiaotong Universit. ON PINNING PHENOMENON OF PLT FERROELECTRIC THIN FILMS CAUSED BY EXCESS Pb. Chin J Mater Res, 1998, 12(6): 655-658.

Abstract References Related Articles Recommended Metrics Download:  PDF(792KB)  Export:  BibTeX | EndNote (RIS)       Abstract  PLT thin films with excess Ph was prepared by metallo-organic decomposition process.Electron probe microanalyzer (EPMA) and Auger electron spectroscopy (AES) depth profile composition analysis has revealed that there is excess Pb in PLT thin films and int Key words:  ferroelectric thin film      pinning phenomenon      hysteresis loop      C-V curve      Received:  25 December 1998      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1998/V12/I6/655 1A.P.deAralljO,J.D.Cuchlaro, L.DMcMillan, M.C.Scott,J.F.Scott, Nature. 374(13), 627(199) 2宋志棠,任巍,张良莹,姚裹,功能材料,28(3),150(1997) 3D·Hennings, Mater·Res.Bull. 6(5), 329(1971) 4E.莱因斯,A.M.格拉斯,铁电体及其有关材料的原理和应用(北京,科学出版社,1989)P.122 5J.Lefevre,J.S.SPeck, R.W.Schwartz, D.Dimos S.J.Lockwood,J.Mater.Ifes. 11(8), 2076(1996) 6HuandS·B·Krunanidbi,J·Mater.Res.. 9(6), 1484(1994) 7Dimos, W.L.Warren, M.B.Sinclair, B.A.Tuttle, R.W.Schwartz,J.Appl.Phy 76(7), 4305(1994) 8Dimos, H.N.AI—ShareeflW.L.warren, M.B.Sinclair, B.A.Tuttle,J.Appl.Phy. 80(3), 1682(1996) [1] ZHOU Yi, TU Qiang, MI Zhonghua. Effect of Preparing Methods on Structure and Properties of Phosphate Glass-ceramics[J]. 材料研究学报, 2023, 37(10): 739-746. [2] DAI Zhihua, BAO Yuwen, ZHANG Jingjiao, SU Xiaodong, ZHANG Lingjun. Photovoltaic Properties of ITO/PZT-Ag2O/Pt  Ferroelectric Diodes[J]. 材料研究学报, 2013, 27(5): 544-548. [3] SONG Zhitang; REN Wei; WU Xiaoqing; ZHANG Liangying; YAO Xi (Xi'an Jiaotong University). EFFECT OF ANNEALING TEMPERATURES ON PHASES AND MICROSTRUCTURES OF Pt AND Pt / Ti BOTTOM ELECTRODES FOR FERROELECTRIC THIN FILMS[J]. 材料研究学报, 1997, 11(4): 363-368. [4] SONG Shigeng; TAN Hui; WANG Xueyan; FU Xiaorong; ZHEN Lirong; TAO Mingde; LIN Chenglu ( Shanghai Institute of Metallurgy; Chinese Academy of Sciences)( Xinjiang Institute of Physics; Chinese A cademy of Sciences). PZT FERROELECTRIC THIN FILMS WITH NANO-CRYSTALLINE BY SOL-GEL PROCESSING[J]. 材料研究学报, 1997, 11(4): 392-396. [5] WAN Defu LI Zuoyi LIN Gengqi CHEN Wei (Huazhong University of Science and Technology). THEORY AND PROPERTIES OF RARE EARTH-TRANSITION METAL FILM FOR MAGNETO-OPTICAL MEDIA[J]. 材料研究学报, 1989, 3(4): 289-295. No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed