|
|
|
| DEPENDENCE OF STRUCTURE OF BURIED SiC LMERS ON C~+ IMPLANTATION DOSE |
| YAN Hui; CHEN Guanghua (Dep. of Applied Physics; Beijing Polytechnic University; Beijing 100022) |
|
Cite this article:
YAN Hui; CHEN Guanghua (Dep. of Applied Physics; Beijing Polytechnic University; Beijing 100022). DEPENDENCE OF STRUCTURE OF BURIED SiC LMERS ON C~+ IMPLANTATION DOSE. Chin J Mater Res, 1998, 12(3): 299-302.
|
|
|
Abstract Buried SiC layers of different implantation doses were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C+ ions implanted into Si substrates. In the present study the beam energy was 50keV and the ion dose was varied from 3.0×1017cm-2 to
|
|
Received: 25 June 1998
|
1 I. H. Wilson, IOn Beam Modification of Insulators (New York, Elsevier,1987) p.245
2 A. Ne jim, P. L. F. Hemment, J. Stoemenos, Appl. Phys. Lett. 66(20), 2646(1995)
3 I. G. Brown, J. E. Galvin, B. F. Grvin, R. A. MacGill, Rev. Sci. Instrum. 57(6), 1069(1986)
4 H. Yan, R. W. M. Kwok, S. P. Wong, Appl. Sci. Science 92, 61(1996)
5 W. G. Spitzer, D. A. Klelnman, C. J. Frosch, Phys. Rev. 113(1), 133(1957)
6 J. A. Borders, S. T. Picraux, W.Beezhold, Appl. Phys. Lett. 18(6), 509(1971)c |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
