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| DEPOSITION DIAMOND FILM BY HFCVD WITH SEPARATE INLET OF CH_4 AND H_2 |
| CHEN Guangchao; HUANG Rongfang; WEN Lishi (Institute of Metal Research;Chinese Academy of Sciences) |
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Cite this article:
CHEN Guangchao; HUANG Rongfang; WEN Lishi (Institute of Metal Research;Chinese Academy of Sciences). DEPOSITION DIAMOND FILM BY HFCVD WITH SEPARATE INLET OF CH_4 AND H_2. Chin J Mater Res, 1997, 11(3): 331-333.
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Abstract HFCVD metliod was employed to deposit diamond film on silicon substrate. The design of in-letting H2 and CH4 separetely was applied, which made the resistanee of tungsten filament dccrease to 20%,compared to that of HFCVD with mixture inletting. Moreover,
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Received: 25 June 1997
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