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| CONTROLLING DEPOSITION RATE OF ITO FILM BY SPECTROMETRY |
| HUANG Shiyong; WANG Demiao; REN Gaocao; CHEN Kangsheng (Zhejiang University) |
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Cite this article:
HUANG Shiyong; WANG Demiao; REN Gaocao; CHEN Kangsheng (Zhejiang University). CONTROLLING DEPOSITION RATE OF ITO FILM BY SPECTROMETRY. Chin J Mater Res, 1997, 11(3): 328-330.
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Abstract In the ITO films deposition by reactive magnetron sputtering, the deposition rate of ITO film will change with the carrying out of sputtering. We provide a new method to monitor the sputtering viel by detecting the characteristic light intensity of plasma
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Received: 25 June 1997
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4.蒋静坪.计算机实时控制系统(杭州,浙江大学出版社,1992) |
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