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| ELECTRONIC PROPERTIS OF Y-DOPED AMORPHOUS SILICON |
| CHENG Xingkui (Shanking University) |
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Cite this article:
CHENG Xingkui (Shanking University). ELECTRONIC PROPERTIS OF Y-DOPED AMORPHOUS SILICON. Chin J Mater Res, 1997, 11(2): 212-215.
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Abstract A new n-type amorphous silicon material, which is prepared by doping with Yttrium by r.f.sputtering, has been obtained. Temperature dependence of conductivity for several samlpes containing different concentration of Y shows that, as the concentration of
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Received: 25 April 1997
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