Chin J Mater Res  1996, Vol. 10 Issue (1): 33-38    DOI:

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THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS

HE Yuhang; WU Xuhui; LIN Hongyi; YU Mingbin;YU Xiaomei; WANG Heng; LI Chong (The Amorphous Physics Research Lab; BUAA Beijing 100083; Dept. Of Electronic Engineering; Beijing Institute of Technology; Beijing 100081)

HE Yuhang; WU Xuhui; LIN Hongyi; YU Mingbin;YU Xiaomei; WANG Heng; LI Chong (The Amorphous Physics Research Lab; BUAA Beijing 100083; Dept. Of Electronic Engineering; Beijing Institute of Technology; Beijing 100081). THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS. Chin J Mater Res, 1996, 10(1): 33-38.

Abstract References Related Articles Recommended Metrics Download:  PDF(487KB)  Export:  BibTeX | EndNote (RIS)       Abstract  In this report Authors employed the HREM and STM to detect the micro-structure of nc-Si:H films, which are fabricated by the PECVD deposition method. The nc-Si:H films are consisted with a mass of micro-grains and a great deal of interfaces among grains. Key words:  an-rystalline silicon film peizo-resistance effect micro-structure freely supported method      Received:  25 February 1996      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1996/V10/I1/33 1何宇亮,刘湘娜,王志超等中国科学(A辑),1992、(9):9952HeYuliangYinChenzhong,ChengGuangruetaLJApplPhys,1994,75(2):7973何宇亮,褚一鸣,王中怀等．半导体学报．1994,15(1):714BaiCL,WangZH,HeYLetalJVacSciTechnolB,1994,12(3):18235刘湘娜,何宇亮,王富朝等．物理学报,1993,42(12):19796余明斌,何宇亮,刘洪涛．物理学报,1995,44(4):6347何宇亮,武旭辉,林鸿溢．科学通报,1995,40(7):6058HeYuliang,ChuYiming,LinHongyietal．ChinPhysLett1993,10(9):5399何宇亮,孙勤生,韦亚一等．1994秋季中国材料研讨会文集Ⅱ卷一分册,北京:化学工业出版社,995:31410JohnYWSeto．JApplPhys1975,46(12):524711何宇亮,殷晨钟,程光煦等．半导体学报,1992,13(11):68312刘刚,余岳辉等．半导体器件北京:电子工程出版社,1990年第6章F No related articles found! No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed