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BORON DOPED DIAMOND HOMOEPITAXIAL GROWTH AND SCHOTTKY CHARACTERIZATION |
SHEN Hesheng; ZHANG Zhiming; HE Xianchang; LI Shenghua(Dept. of Applied Chemistry; Shanghai Jiao Tong University; Shanghai 200030) |
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Cite this article:
SHEN Hesheng; ZHANG Zhiming; HE Xianchang; LI Shenghua(Dept. of Applied Chemistry; Shanghai Jiao Tong University; Shanghai 200030). BORON DOPED DIAMOND HOMOEPITAXIAL GROWTH AND SCHOTTKY CHARACTERIZATION. Chin J Mater Res, 1995, 9(2): 163-166.
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Abstract An experimental investigation has been done for diamond homoepitaxial growth on(100) diamond substrate by microwave PCVD method. doping and Schottky characterization. The results concern the influence of the reaction gases,carbon concentration, ratio of b
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Received: 25 April 1995
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1KatoM,SatoY,MatsumotoYSetakaN.JCrystalGrowth,1983;62:6422WatanabeI,SugataK.JpnJApplPhys,1988;27:13973JengDG.JApplPhys,1990;68:59022 |
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