用<strong>RF-PECVD</strong>法制备类金刚石薄膜

doi:10.11901/1005.3093.2020.142

材料研究学报

2021, Vol. 35

Issue (2): 154-160 DOI: 10.11901/1005.3093.2020.142

研究论文

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用RF-PECVD法制备类金刚石薄膜

熊文文, 何嵩(

), 郑淞生, 程其进, 沈宏勋, 陈朝(

)

厦门大学能源学院厦门 361102

Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD

XIONG Wenwen, HE Song(

), ZHENG Songsheng, CHENG Qijin, SHENG Hongxun, CHEN Chao(

)

College of Energy, Xiamen University, Xiamen 361102, China

引用本文:

熊文文, 何嵩, 郑淞生, 程其进, 沈宏勋, 陈朝. 用RF-PECVD法制备类金刚石薄膜[J]. 材料研究学报, 2021, 35(2): 154-160.
Wenwen XIONG, Song HE, Songsheng ZHENG, Qijin CHENG, Hongxun SHENG, Chao CHEN. Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD[J]. Chinese Journal of Materials Research, 2021, 35(2): 154-160.

全文: PDF(4830 KB) HTML

摘要:

用射频等离子体增强化学气相沉积(RF-PECVD)法在硅衬底上沉积类金刚石(DLC)薄膜，通过控制甲烷(CH₄)与氩气(Ar)流量的比值( $V C H 4 / V A r$ )分别在上极板和下极板上沉积制备出一系列DLC薄膜，用Raman光谱等检测技术表征了DLC薄膜的结构、表面粗糙度、表面形貌和硬度。结果表明：随着 $V C H 4 / V A r$ 比例的改变在下极板可制备出含有不同sp³和sp²杂化态比例( $S s p 3 / S s p 2$ )的DLC薄膜。随着 $V C H 4 / V A r$ 的提高，在下极板沉积的DLC薄膜的 $S s p 3 / S s p 2$ 杂化态比值先上升后下降， $V C H 4 / V A r$ =1时的 $S s p 3 / S s p 2$ 杂化态比值达到最高1.34；而在上极板沉积的DLC样品其 $S s p 3 / S s p 2$ 比例没有明显的变化。在上极板进气口沉积样品比在下极板出气口沉积样品重复性好，样品更光滑致密、硬度更高。

关键词 ：材料结构与性能, 稳定制备, RF-PECVD, 类金刚石薄膜, 流量比值, 衬底位置

Abstract：

Diamond-like carbon (DLC) thin films were deposited on silicon plates, placed at the top and bottom of the reaction chamber respectively, by plasma-enhanced chemical vapor deposition (RF-PECVD). Various DLC thin films were obtained by changing the flow ratio of CH₄ and $A r (V C H 4 / V A r)$ . The structure, surface roughness, surface morphology and hardness of DLC films were characterized by means of Raman spectroscopy and other methods. The results show that DLC films with different $S s p 3 / S s p 2$ ratios could be prepared on bottom plates by changing $V C H 4 / V A r$ , while the $S s p 3 / S s p 2$ ratio kept constant for DLC films prepared on top plate. The films deposited on top plates placed near the gas inlet are smoother, denser, harder and more reproducible than that on bottom plates placed near the gas outlet.

Key words： structure and properties of materials stable preparation RF-PECVD DLC thin films flow ratio substrate position

收稿日期: 2020-04-29

ZTFLH:

TB34

基金资助:福建省科技厅工业引导项目(2017H0038)

作者简介: 熊文文，男，1994年生，硕士

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.142 或 https://www.cjmr.org/CN/Y2021/V35/I2/154

图1 RF-PECVD腔室结构的示意图

图2 在上极板和下极板制备的VCH4/VAr不同的DLC薄膜的拉曼光谱和分峰谱

$V C H 4 / V A r$	Top plate D bond /cm^-1		Top plate G bond /cm^-1		Bottom plate D bond /cm^-1		Bottom plate G bond /cm^-1
$V C H 4 / V A r$	Position	FWHM	Position	FWHM	Position	FWHM	Position	FWHM
1:3	1462	153.89	1558	109.62	1365	45.78	1605	39.00
1:2	1461	155.21	1558	111.79	1332	78.83	1598	35.00
1:1	1465	153.39	1560	110.70	1334	86.28	1602	55.70
3:1	1469	153.88	1557	110.8	1332	104.79	1605	63.89
5:1	1462	154.66	1559	110.79	1342	84.32	1602	53.28
7:1	1457	153.79	1557	109.43	1339	23.09	1602	20.60
8:1	1468	153.70	1560	110.34	1355	14.28	1593	21.53

表1 拉曼峰的峰位和半峰宽

图 3 VCH4/VAr对在上极板和下极板制备的DLC薄膜硬度的影响

图4 VCH4/VAr对在上极板和下极板制备的DLC薄膜Ssp3/Ssp2的影响

图5 以CH4为碳源用RF-PECVD方法制备DLC薄膜的机理示意图

图6 RF-PECVD腔室等离子体分布的示意图

$V C H 4 / V A r$	Deposition time/min	Thickness /nm		Deposition rate /nm·min^-1
$V C H 4 / V A r$	Deposition time/min	Top plate	Bottom plate	Top plate	Bottom plate
1:3	30	557.68	127.68	18.60	4.25
1:2	30	587.00	174.32	19.57	5.81
1:1	30	646.55	215.50	21.55	7.18
3:1	30	854.86	332.71	28.50	11.09
5:1	30	791.96	301.56	26.40	10.05
7:1	30	626.14	129.12	20.87	4.30
8:1	30	386.91	47.32	12.90	1.58

表2 薄膜和厚度和沉积速率

图7 VCH4/VAr对在上极板和下极板制备的DLC薄膜表面粗糙度的影响

图8 VCH4/VAr为1时在上极板和下极板沉积的DLC薄膜的AFM表面形貌

图9 VCH4/VAr为1时在上极板(a)和下极板(b)沉积的DLC薄膜样品的SEM照片

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