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材料研究学报  2002, Vol. 16 Issue (5): 490-494    
  论文 本期目录 | 过刊浏览 |
InAs自组织量子点(线)的制备和表征
武光明1;李月法2;贾锐3
1 北京石油化工学院 2 中国科学院半导体研究所 3中国科学院半导体研究所超晶格国家
引用本文:

武光明; 李月法; 贾锐 . InAs自组织量子点(线)的制备和表征[J]. 材料研究学报, 2002, 16(5): 490-494.

全文: PDF(848 KB)  
摘要: 在InP(001)基衬底上用分子束外延方法生长了InAs纳米结构材料,通过改变生长方式,得到了InAs量子点和量子线。根据扫描电镜和透射电镜观测结果的分析,认为衬底旋转时浸润层三角形状的台阶为InAs量子线的成核提供了优先条件, 停止衬底旋转时InAlAs缓冲层沿[1-10]方向分布的台阶促使InAs优先形成量子点。讨论了量子点和量子线的形成机理。
关键词 分子束外延生长Stranski-krastanow模式    
Key words
收稿日期: 1900-01-01     
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