|
|
|
| 分子束外延材料表面椭圆缺陷的研究进展 |
| 王红梅;孔梅影 |
| 中国科学院半导体研究所;中国科学院半导体研究所 |
|
| PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS |
| WANG Hongmei;KONG Meiying (Institute of Semiconductors; Chinese Academy of Sciences) |
引用本文:
王红梅;孔梅影. 分子束外延材料表面椭圆缺陷的研究进展[J]. 材料研究学报, 1997, 11(4): 337-345.
,
.
PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS[J]. Chin J Mater Res, 1997, 11(4): 337-345.
1C.E.C.Wood,L.Rathbun,H.Ohno,D.DeSimone,J.Cryst.Growth.51(2),299(1981)
2. Y.G.Chai, R.Chow, Appl.Phys.Lett 38(10),796(1981)
3 .S.Izumi,N.Hayafuji,T.Sonoda,S.Takamiya,S.Mitsui,J.Cryst.Growth.150(1),7(1995)
4.K.Nanbu,J.Saito,T.Ishikawa,K.Kondo,A.Shibatomi,J.Electrochem.Soc.133(3),601(1986)
5.K.Fujwara,K.Kanamoto,YN.Ohta,Y.Tokuda,T.Nakayama,J.Cryst.Growth.80(1),104(1987)
6 Y.G.Chai,Y.C.Pao,T.Hierl,Appl.Phys.Lett.47(12),1327(1985)
7 .Y.H.Wang, W.C.Liu, C.Y.Chang, SrtLiao, J.Vac Sci.Technol B4(1),30(1986)
8. J.C.M.Hwang,T.M.Brennan,A.Y.Cho,J.Electrochem.Soc 130(2),493(1983)
9. W.C.Liu,D.F.Guo,C.Y.Sun,W-S.Lour,J.Cryst.Growth.114(4),700(1991)
10. N.Chand, S.N.G.Chu, J.Cryst.Growth 104(2),485(1990)
11.M.Shinohara,T.Ito,K.Wada,Y.Imamura、Jpn.J.Appl.Phys.23(6),L371(1984)
12.Y.Nishikawa,K.Kanamoto,Y.Tokuda,K.Fujiwara,T.Nakayma,Jpn.J. Appl.Phys.25(6),908(1986)
13.T.Nakamura,K.Nanbu,T.Ishikawa,K.Kondo,J.Appl.Phys.64(4),2164(1988)
14 . M.A.Cotta, R.A.Hamm, S.N.G.Chu, L.R.Harriott, H.Temkin, Appl Phys. Lett 66(18),2358(1995)
15.A Salokatve,J.Varrio,J.Lammasniemi,H.Asonen,M.Pessa,Appl.Phys.Lett.51(17),1340(1987)
16.Y.C.Chow, C.T.Lee, Jpn.J.Appl.Phys 26(5),774(1987)
17.M.Shinohara, T.Ito, Y.Imamura,J.Appl.Phys 58(9),3449(1985)
18.M.Shinohara,T.Ito,J.Appl.Phys.65(11),4260(1989)
19.H.Kawada,S.Shirayone,K.Takahashi ,J.Cryst.Growth.128(1-4),550(1993)
20.Y.H.Wang ,W.C.Liu,S.A.Liao,K.Y.Cheng ,C.Y.Chang,Jan.J.Appl.Phys.24(5),(1985)628
21. Y.Suzuki, M.Seki, Y.Horikoshi, H.Okamoto, Jpn.J.Appl.Phys 23(2),164(1984)
22.H.Saito,J.O.Borland,H.Asahi,H.Nagai,K、Nawata,J.Cryst.Growth.64(3),521(1983)
23. H.Kakibayashi, F.Nagata, Y.Katayama , Y.Shirski, Jpn.J.Appl.Phys. 23(11),L846(1984)
24.M.Bafleur, A.Munoz-yague, Rocher, J.Cryst.Growth. 59(3),531(1982)
25. T.Ito, M.Shinohara, Y.Imamura, Jpn.J.Appl.Phys, 23(8),L524(1984)
26.S.L.Weng,Appl.Phys.Lett 49(6),345(1986)
27.C.T.Lee, Y.C.Chow, J.Cryst .Growth .91(1/ 2),169(1988)
28.P.E.Brunerneier,J.Vac.Sci.Technol. B9(5),2554(1991)
29.N.Chand,J.Vac.Sci.Technol B8(2),160(1990)
30.J.N.Miller, J.Vac.Sci.Technol. B10(2),803(1992)
31.K.Takahashi,H.Kawada,S.Ueda,M.Furuse,S.Shiayone,J.Vac.Sci.Technol.A9(3),854(1991)
32.S.Matteson, H.D.Shih, Appl.Phys.Lett 48(1),47(1986)
33. A.C.Papadopoulo, F.Alexandre, J.F.Bresse, Appl.Phys.Lett. 52(33),224(1988)
34.J.E.M.Haverkort, M.P.Schuwer, M.R.Leys,J.H.Wolter, Semicond.Sci.Technol 7(1),A59(1992)
35.J.Sapriel,J.Chavignon, F.Alexandre, Appl.Phys.Lett. 52(23),1970(1988)
36.W.T.Tsang,Appl.Phys.Lett. 46(11),1086(1985)
37.R.A.Stall,J.Zilko,V.swaminathan,N.Schumaker,J.Vac .Sci.Techonol.B3(2),524(1985)
38.T.Sonoda,M.Ito,K.Segawa,S.Takamiya,S.Mitsui,Jan.J.Appl.Phys.27(3),337(1988)
39.D.G.Schlom, W.S.Lee, T.Ma,J.S.Harris,Jr,J.Vac.Sci.Technol B7(2),296(1989)
40.N.Watanabe,T.Fukunaga,K.L.I.Kobayashi,H.Nakashima,Jpn.JAppl.Phys.24(7),L498(1985)
41.M.Metze,A.R.Calawa,J.G.Mavroides,J .Vac.Sci.Technol.B1(2),166(1983)
42.K.Akimoto,M.Dohsen,M.Arai,N.Watanabe,J.Cryst.Growth.73(1),117(1985)
43.P.D.Kirchner,J.M.Woodwall,J.L.Freeout ,G.D.Pettit, Appl,Phys Lett.38(6),427,(1981)
44. S.L.Weng,C.Webb,Y.G.Chai,S.G.Bandy,Appl.Phys.Lett.47(4),391(1985)
45.J.Massies ,J.P.Contour, J.Appl.Phys.58(2),806(1985)
46.H.Fronius,A.Fischer,K.Ploog,Jpn.J.Appl.Phys.25(2),L137(1986)
47.H.Fronius,A.Fischer,K.Ploog,J.Cryst.Growth.81(1-4),169(1987)
48. C.Y.Li,D.H.Zhang,J.Cryst.Cryst.Growth.165(1),15(1996)
49. S.Takagishi,H.Yao,H.Mori,J.Cryst.Growth.129(3/4),443(1993) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
