材料研究学报  1996, Vol. 10 Issue (5): 525-528

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反应离化团束(RICB)法生长CN硬质薄膜

谢俊清;冯嘉猷;郑毅

清华大学

CARBON NITRIDE FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD

XIE Junqing;FENG Jiayou; ZHENG Yi(Tsinghua University).

谢俊清;冯嘉猷;郑毅. 反应离化团束(RICB)法生长CN硬质薄膜[J]. 材料研究学报, 1996, 10(5): 525-528.
, , . CARBON NITRIDE FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD[J]. Chin J Mater Res, 1996, 10(5): 525-528.

摘要 参考文献 相关文章 Metrics 全文: PDF(1221 KB)   摘要: 用反应离化团束(RICB)法,以低分子量聚乙烯为蒸发材料,氨气为反应气体,在NaCl(100)和Si(100)衬底上淀积C—N薄膜。透射电子衍射(TEM)分析表明薄膜中含有β—C3N4晶粒,X射线光电子谱(XPS)和红外吸收谱(IR)表明薄膜中存在C、N原子的化学键合。 关键词 ： 离化团束,  C—N薄膜     Abstract：Carbon nitride thin films have been prepared by reactive ionized cluster beam (RICB)technique on Si(100)and NaCl(100) substrates, using low molecular weight polyethylene as evaporation material and ammonia as reactive gas. As revealed by transmission elec Key words： ionized cluster beam; carbon nitride films 收稿日期: 1996-10-25      基金资助:国家自然科学基金 服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 谢俊清 冯嘉猷 郑毅 44.8K 链接本文: https://www.cjmr.org/CN/      或      https://www.cjmr.org/CN/Y1996/V10/I5/525 1LiuAY,CohenMLScience1989,245:8412HanHX,FeldmanBJSolidStateCommun,1988,65:9213ChenMY,LinX,DravidVP,ChungYW,WongMS,SproulWD．SurfaceandCoatingTech,1992,54//55:3604YuKM,CohenML,HallerEE,HansenWL,LiuAY,WuIC．PhysRevB1994,49:50345FujimotoF,OgataK．JpnJApplPhys,1993,32:L4206NiuCM,LuYZ,LieberCMScience,1993,261:3347RiviereJP,TexierD,DelafondJ,JaouenM,MatheEL,ChaumontJ．MaterialsLetters1995,22:1158TakagiT,YamadaI,KunoiM,KoblyamaS．proc2ndIntConfonIonSources,Vienna1972:7909KumarS,TansleyTLSolidStateCommun,1993,88:803P No related articles found! Viewed Full text Abstract Cited   Shared      Discussed