拓扑量子材料与量子反常霍尔效应

doi:10.11901/1005.3093.2014.801

材料研究学报

2015, Vol. 29

Issue (3): 161-177 DOI: 10.11901/1005.3093.2014.801

本期目录 | 过刊浏览

拓扑量子材料与量子反常霍尔效应

何珂(

),薛其坤(

)

清华大学物理系低维量子物理国家重点实验室北京 100084

Topological Quantum Materials and Quantum Anomalous Hall Effect

Ke HE(

),Qikun XUE(

)

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

引用本文:

何珂,薛其坤. 拓扑量子材料与量子反常霍尔效应[J]. 材料研究学报, 2015, 29(3): 161-177.
Ke HE, Qikun XUE. Topological Quantum Materials and Quantum Anomalous Hall Effect[J]. Chinese Journal of Materials Research, 2015, 29(3): 161-177.

全文: PDF(4075 KB) HTML

摘要:

简要综述自从2005年前后发展起来的一类新的材料体系-“拓扑”量子材料, 它包含拓扑绝缘体、拓扑晶体绝缘体、拓扑超导体和拓扑半金属等。这类材料中较强的自旋轨道耦合作用导致了包括量子反常霍尔效应在内的丰富多彩的量子现象, 有可能对未来低能耗电子学、拓扑量子计算和清洁能源等技术的发展具有重大的推动作用。

关键词 ：综述, 拓扑绝缘体, 量子霍尔效应, 量子反常霍尔效应

Abstract：

We briefly review topological quantum materials, a new system of materials developed since 2005, including topological insulators, topological crystalline insulators, topological superconductors, and topological semimetals. The strong spin-orbit coupling in these materials lead to rich quantum phenomena such as quantum anomalous Hall effect, which can significantly promote the developments of new technologies such as low-energy-consuming electronics, topological quantum computation, and green energy.

Key words： review topological insulator quantum Hall effect quantum anomalous Hall effect

收稿日期: 2014-08-12

基金资助:* 国家自然科学基金11174343资助项目。

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https://www.cjmr.org/CN/10.11901/1005.3093.2014.801 或 https://www.cjmr.org/CN/Y2015/V29/I3/161

图1 二维电子气在强磁场下的朗道能级和整数量子霍尔效应, 右图蓝线和绿线分别代表霍尔电阻和纵向电阻(图片来自维基百科)

图2 量子霍尔效应/量子反常霍尔效应的手性边缘态、量子自旋霍尔效应的螺旋性边缘态, 以及三维拓扑绝缘体的狄拉克表面态的示意图。(a)、(b)中箭头代表电流方向, 颜色代表自旋方向; (c)图中箭头代表自旋方向

图3 二维拓扑绝缘体(Hg, Cd)Te/HgTe/(Hg, Cd)Te量子阱的结构示意图和量子自旋霍尔效应的实验结果(图片来自参考文献[18])

图4 三维拓扑绝缘体Bi2Se3的晶格结构示意图及其表面态能带结构的计算结果和角分辨光电子能谱测量结果。(部分图片来自文献[32])

图5 角分辨光电子能谱测量的分子束外延生长的Bi2Se3薄膜表面能带结构随层厚的变化。(图片来自参考文献[49])

图6 量子反常霍尔效应示意图: 霍尔电阻随磁场的变化及霍尔电导和纵向电导随化学势的变化

图7 不同Bi掺杂量的Cr掺杂的(BixSb1-x)2Te3薄膜霍尔电阻随磁场的变化(a-f)以及利用钛酸锶衬底作为介电层的场效应器件的示意图(g)和真实器件照片(h)

图8 量子反常霍尔效应的实现: 不同栅压下霍尔电阻随磁场的变化及零磁场下的霍尔电阻(蓝色)和纵向电阻(红色)随偏压的变化

图9 强磁场下的量子反常霍尔效应: 霍尔电阻及纵向电阻随磁场(最大18特斯拉)的变化

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