材料研究学报, 2026, 40(7): 543-552 DOI: 10.11901/1005.3093.2026.099

研究论文

Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线的制备及其温度传感性能

周明晗1, 陈双龙1, 王秋实,1, 王雪娇1, 刘才龙2

1.渤海大学物理科学与技术学院 锦州 121013

2.聊城大学物理科学与信息工程学院 聊城 252000

Fabrication and Temperature Sensing Performance of Ho3+/Yb3+ Co-doped α-Si3N4 Branched Nanowires

ZHOU Minghan1, CHEN Shuanglong1, WANG Qiushi,1, WANG Xuejiao1, LIU Cailong2

1.College of Physical Science and Technology, Bohai University, Jinzhou 121013, China

2.College of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252000, China

通讯作者: 王秋实,副教授,wang_jiu_jiu@foxmail.com,研究方向为III-N族宽禁带半导体

责任编辑: 姚金金

收稿日期: 2026-01-19   修回日期: 2026-03-02  

基金资助: 国家重点研发计划(2023YFA1406200)
兴辽英才青年拔尖人才(XLYC2403017)
辽宁省教育厅面上项目(JYTMS20231627)

Corresponding authors: WANG Qiushi, Tel:(0416)3400137, E-mail:wang_jiu_jiu@foxmail.com

Received: 2026-01-19   Revised: 2026-03-02  

Fund supported: National Key Research and Development Program of China(2023YFA1406200)
Liaoning Revitalization Talents Program(XLYC2403017)
General Program of the Education Department of Liaoning Province(JYTMS20231627)

作者简介 About authors

周明晗,男,2003年生,硕士生

摘要

用等离子体电弧法制备了Ho3+/Yb3+共掺杂Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线并对其表征,根据表征结果、上转换(UC)发光强度比和衰减寿命研究了这种分支纳米线在298~558 K的温度传感性能。结果表明,这种Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线由主干和分支交错构成,分支沿主干两侧平行生长。980 nm激光的激发使Si3N4:Ho3+/Yb3+分支纳米线表现出3处UC发射峰:540 nm处的绿光发射对应Ho3+的(5F4,5S25I8) 能级跃迁,660 nm和756 nm处的红光和近红外光发射分别来源于5F55I85F45I7跃迁。基于I540I660强度比测温,计算出最高相对灵敏度达到2.13% K-1,而基于540 nm发射峰衰减寿命的相对灵敏度也达到1.10% K-1

关键词: 无机非金属材料; 上转换; 等离子体电弧法; 氮化硅; 温敏特性

Abstract

Herein, Ho3+/Yb3+ co-doped Si3N4 branched nanowires (Si3N4:Ho3+/Yb3+) were fabricated via plasma arc technique, and then characterized by means of X-ray diffraction, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. Results indicate that the branched nanowires comprise a main trunk with multiple branches growing in parallel along both sides, while the Ho3+ and Yb3+ ions were successfully incorporated into the branched nanowire structure of Si3N4. Under 980 nm laser excitation, the Si3N4:Ho3+/Yb3+ branched nanowires exhibit three distinct up-conversion (UC) luminescence peaks: green emission at 540 nm corresponds to the (5F4,5S25I8) transition of Ho3+; while the red emissions at 660 nm and 756 nm are attributed to the (5F55I8) and (5F45I7) transitions, respectively. Based on the UC emission intensity ratio and decay lifetime, the optical temperature sensing performance of the Ho3+/Yb3+ co-doped Si3N4 branched nanowires was systematically investigated over the temperature range of 298-558 K. It follows that the method for temperature measurement based on the I540/I660 intensity ratio achieves a maximum relative sensitivity of 2.13% K-1. Meanwhile, the relative sensitivity based on the decay lifetime of the 540 nm emission peak reaches 1.10% K-1. The above findings prospect the great potential in application of the Ho3+/Yb3+ co-doped Si3N4 branched nanowires for optoelectronic devices, biomedicine, high-precision temperature sensing, and laser technologies.

Keywords: inorganic non-metallic materials; up-conversion; plasma arc method; silicon nitride; temperature sensing

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本文引用格式

周明晗, 陈双龙, 王秋实, 王雪娇, 刘才龙. Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线的制备及其温度传感性能[J]. 材料研究学报, 2026, 40(7): 543-552 DOI:10.11901/1005.3093.2026.099

ZHOU Minghan, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong. Fabrication and Temperature Sensing Performance of Ho3+/Yb3+ Co-doped α-Si3N4 Branched Nanowires[J]. Chinese Journal of Materials Research, 2026, 40(7): 543-552 DOI:10.11901/1005.3093.2026.099

氮化硅(Si3N4)是一种陶瓷和介电材料,其强度高、柔韧性良好、抗热震性和抗氧化性等性能优异[1,2]。Si3N4的禁带宽度为5.3 eV,在可见光到红外波段的透明度较高且耐腐蚀性能优异。在Si3N4中掺杂稀土离子,可拓宽其发射波长范围和提高发光效率[3~5]。Ma等用高温固相法制备Si3N4:Ce3+并研究了其光致发光特性[6];Huang等用低温球磨法制备Si3N4:Y3+、Si3N4:Ce3+和Si3N4:Tb3+,揭示了这些材料的发光机理[7];我们前期的研究则采用等离子体电弧法,成功制备了Si3N4:Ce3+、Tb3+、Eu2+/Eu3+,并对其光致发光性能、衰减曲线及热猝灭行为进行了探讨,为在Si3N4纳米结构中掺入大尺寸功能离子提供了可行途径[8]。单一稀土离子掺杂可使材料产生特定的发射中心,但是其发光波段和激发通道固定,难以实现宽谱发射、多模式发光或调变颜色。双离子共掺杂Si3N4基材料可通过能量传递(如敏化剂-激活剂机制)与多个发射中心的协同作用提高激发效率、拓宽发射光谱或调控发射峰位,从而有望拓展其在白光照明、多色显示及光通信等领域的应用[9]。双稀土离子共掺杂体系可能实现下转换发光或上转换发光[10,11]。上转换发光材料能将低能量的近红外激发光转换为高能量的短波长发射光,可应用在生物成像、医疗诊断、显示技术、上转换激光器以及光催化等领域[12~17]。Ho3+具有阶梯状能级结构和较长的激发态寿命,有利于激发态粒子布居。但是,Ho3+的基态与激发态之间的能级间距与980 nm光子能量不匹配,单独掺杂时上转换效率较低。Yb3+的能级结构简单和在980 nm附近的吸收截面较大,且其能级与Ho3+匹配良好,有利于高效传递能量[18,19]。同时,Yb3+和Ho3+的离子半径与Si3N4基质中Si4+的离子半径差异较大,可产生晶格畸变使稀土离子局域晶体场的对称性降低,进而提高4f–4f跃迁几率[20]。因此,构建Ho3+/Yb3+共掺杂Si3N4体系有望提高其发光性能。目前,关于多种Ho3+/Yb3+共掺体系的荧光测温性能的研究较多[21~30]。但是,上述材料大多基于氧化物、钼酸盐或卤化物体系,其热导率和热稳定性较低。鉴于此,本文用等离子体电弧法制备Ho3+/Yb3+共掺杂Si3N4分支状纳米线(Si3N4:Ho3+/Yb3+),研究其光学温度传感性能。

1 实验方法

用等离子体电弧法制备Si3N4:Ho3+/Yb3+分支纳米线[31]。将摩尔比为200:1:2的高纯硅粉(99.9%)、Ho2O3粉(99.99%)和Yb2O3粉(99.99%)充分混合后压制成块体,然后将其置于石墨坩埚中作为阳极,与垂直对置的钨棒阴极构成放电体系。反应前,将腔室抽真空后充入高纯氮气,工作压力为40 kPa。设定放电电流为100 A,接触引弧后调节极间距,使工作电压维持在20 V,持续放电20 min。放电结束后通入氮气将产物钝化处理10 h,阳极石墨坩埚内的白色绒毛状产物即为Si3N4:Ho3+/Yb3+分支纳米线。

用DX-2700BH的X射线衍射仪测试纳米线的XRD谱(Cu Kα, λ = 0.154178 nm),2θ为10°~80°。用XPS (Thermo Escalab 250 Xi)谱仪分析样品表面元素价态。用SEM (HITACHIS-4800)、TEM (JEM-2200FS)以及EDS检测样品的形貌和元素组成。用全功能型稳态/瞬态荧光光谱仪(Edinburgh FLS1000)和波长为980 nm的二极管激光器(MDL-III-980-2W)作为激发光源,测试样品的光致发光和温度依赖性发光光谱。将样品置于光谱仪配备的高温加热装置中(温度控制范围为298~558 K)进行变温测试,以研究温度对样品上转换(UC)发光性能的影响。为了避免激光热效应的影响,所有测试均在低激发功率(0.5~1.2 W)条件下进行。

2 结果和讨论

2.1 Si3N4:Ho3+/Yb3+ 分支纳米线的物相组成

图1a给出了Si3N4:Ho3+/Yb3+分支纳米线和Si3N4的XRD谱。可以看出,Si3N4:Ho3+/Yb3+分支纳米线中主相α-Si3N4的含量为92.9% (PDF#01-071-6746),β-Si3N4的含量为7.1% (PDF#01-073-3035)。所有衍射峰均与α相和β相的标准谱吻合,没有出现杂峰。同时,由于稀土离子掺杂引起晶格畸变,可观察到Si3N4:Ho3+/Yb3+分支纳米线的衍射峰与未掺杂Si3N4相比向小角度方向偏移[32]。虽然晶格发生了上述变化,但是离子尺寸的不匹配使Ho3+/Yb3+掺入Si3N4仍较为困难。在空间群为P31c (159)的α-Si3N4六方晶格中,大尺寸稀土离子最可能占据SiN4四面体框架内晶胞中两个封闭间隙的2b位置[33],如图2所示。同时,含氧的掺杂剂Ho2O3和Yb2O3在样品中引入了氧。为了保持电荷平衡,在掺杂过程中O2-发生替代N3-。如图1b所示,在EDS能谱中可见Si、N和Yb的信号;Ho的掺杂浓度较低,因此其特征信号较弱。定量分析的结果表明,样品中Si、N、Yb与Ho的原子比约为42.5∶56.6∶1.4∶0.5。

图1

图1   Si3N4:Ho3+/Yb3+分支纳米线、Si3N4的XRD谱以及Si3N4:Ho3+/Yb3+分支纳米线的EDS分析

Fig.1   XRD patterns of Si3N4:Ho3+/Yb3+ branched nanowires and pure Si3N4 (a), and EDS analysis diagram of Si3N4:Ho3+/Yb3+ (b)


图2

图2   α相Si3N4:Ho3+/Yb3+的结构模型

Fig.2   Proposed structural model of α-Si3N4: Ho3+/Yb3+


图3a给出了样品的XPS全谱,可见O、N、C、Si以及Yb元素的特征峰。在测试过程中用C元素进行电荷校正以消除表面荷电效应,O元素来源于表面氧化。图3b给出了Si 2p的高分辨XPS谱,位于101.73 eV的主峰对应Si-N键的结合能,表明样品中Si的存在形式Si3N4[34]图3c给出了N 1s的高分辨谱,位于397.63 eV的主峰归属于N-Si键的结合能,与Si 2p的分析结果一致,进一步证实形成了Si3N4主体结构[30,33,34]图3d给出了Ho 4d的高分辨XPS谱。Ho的掺杂浓度较低且Ho 4d能级与Si 2p的子峰重叠使Ho的特征峰强度较弱而未出现明显的峰。图3e给出了Yb 4d的高分辨谱,出现在185.93 eV处的清晰特征峰对应Yb 4d的结合能,表明Yb3+已经掺杂进Si3N4分支纳米线[35]

图3

图3   Si3N4:Ho3+/Yb3+纳米线的XRS全谱,以及Si 2p、N 1s、Ho 4d、Yb 4d的高分辨率XPS谱

Fig.3   XRS full spectra of Si3N4:Ho3+/Yb3+ branched nanowires (a) and high-resolution XPS profiles of Si 2p (b), N 1s (c), Ho 4d (d) and Yb 4d (e)


2.2 Si3N4:Ho3+/Yb3+ 分支纳米线的形貌

图4a,b给出了Si3N4:Ho3+/Yb3+分支纳米线的结构,可见其分支结构、密度较高、长度达微米级,主干直径为350~500 nm,分支直径为50~100 nm。分支纳米线的表面光滑,没有再分支,尖端上也没有液滴。这表明,在合成过程中生长条件稳定、成核点分布均匀,符合气固(VS)机制中的“二次成核定向生长”特征。从图4c可见,分支纳米线分支的方向与主干成直角。图4d给出了主干及其附近位置的电子衍射(SAED)图案,根据清晰的衍射斑点可标定出(100)、(101)、(001)等晶面,表明其结构具有良好的单晶特性。图4e给出的分支纳米线边缘放大的HRTEM图像进一步揭示了纳米线的晶体结构连续性,测出α六方相的(100)和(001)晶面间距分别为0.67 nm和0.56 nm。图4e中纳米线的径向表明,分支纳米线沿着[001]方向生长。在非平衡和过饱和的生长条件下,易形成此类分级纳米结构。在本文的实验中,反应腔内的高能量电弧放电等离子体产生的温度梯度和剧烈的热对流,有利于合成Si3N4:Ho3+/Yb3+分支纳米线。同时,Ho3+/Yb3+进入Si3N4晶格产生的高浓度硅空位,是分支二次成核的新位点。因此,用等离子体电弧法可较为便捷地制备出Si3N4:Ho3+/Yb3+分支纳米线。

图4

图4   Si3N4:Ho3+/Yb3+分支纳米线的低放大率、高放大率SEM和TEM照片,插图为其对应的SAED图案和Si3N4:Ho3+/Yb3+分支纳米线的HRTEM图像

Fig.4   SEM images of Si3N4:Ho3+/Yb3+ branched nanowires (a, b), TEM image of branched nanowires (c), inset presents its corresponding SAED pattern (d) and HRTEM image of Si3N4:Ho3+/Yb3+ branched nanowire (e)


2.3 Si3N4:Ho3+/Yb3+ 分支纳米线的光学性能

图5给出了980 nm激光激发的Si3N4:Ho3+/Yb3+分支纳米线室温UC发光光谱,可见Ho3+的特征发射,绿光、红光和近红外光发射峰的中心波长分别位于540 nm、660 nm和759 nm,对应的Ho3+能级跃迁分别为5F4, 5S25I85F55I85F45I7。在整体上,绿色的发射强度明显比红色和近红外的高。红色发射峰的强度较弱,因为室温较弱的非辐射弛豫使5F5能级分布较少。来自较高激发态(5F4, 5S2, 5F5)的发射峰,表明Yb3+的敏化提高了Ho3+在高能级的分布。

图5

图5   Si3N4:Ho3+/Yb3+分支纳米线在980 nm激光激发下的上转换发射谱

Fig.5   Up-conversion emission spectrum of Si3N4:Ho3+/Yb3+ branched nanowires under 980 nm laser excitation


与紫外光线相比,980 nm激光的能量较低。更高的能量状态涉及多个光子吸收,发光积分强度为[36]

I=Pn

其中P为激光泵浦功率,n为UC所需光子数。在激发功率范围为0.5~1.2 W (功率密度0.5~1.2 W/cm2)的条件下研究了UC发光过程中跃迁所需的光子数与泵浦功率之间的关系。从图6a可见,随着激发功率的提高540 nm和660 nm发射带的强度均呈现提高的趋势。图6b给出了540 nm和660 nm处UC发光强度与泵浦功率的关系。可以看出,发射强度与泵浦功率之间呈近似线性关系。光子数n的图像表示为拟合直线的斜率,540 nm和660 nm两个发射的n值分别为2.08和2.16。结果表明,上述发射带中的发光需要两个红外光子才能产生一个可见光子,即发光为双光子过程。

图6

图6   Si3N4:Ho3+/Yb3+分支纳米线在不同功率980 nm激光激发下的UC荧光发射谱,以及激发功率与积分光强的双对数关系

Fig.6   Up-conversion fluorescence emission spectra of Si3N4:Ho3+/Yb3+ branched nanowires under 980 nm laser excitation of different powers (a), and bilogarithmic relationship between excitation power and integral light intensity (b)


Ho3+不能直接吸收980 nm的光子填充其发射能级;因此,根据Yb3+-Ho3+能级图研究了Ho3+在980 nm激光光子作用下的激发态布居,如图7所示。该过程涉及能量转移(Energy transfer, ET)、基态吸收(GSA)和非辐射弛豫(NR)。980 nm激发,使Yb3+从基态2F7/2跃迁到激发态2F5/2。通过ET过程将它的能量转移到临近处于5I8基态的Ho3+上,使其跃迁到5I6中间激发态,Ho3+5I6能级其一部分通过Yb3+的ET跃迁到5F45S2能级。Ho3+5F45S2能级发生辐射弛豫到5I8能级,发射出540 nm的绿色光,也可以发生辐射弛豫到5I7能级发射出756 nm的红色光。Ho3+5I6能级的另一部分发生非辐射弛豫到5I7,再通过Yb3+的ET跃迁到5F5能级,然后发生辐射弛豫到5I8能级,发射出660 nm的红色光。

图7

图7   能级跃迁图

Fig.7   Energy level transition diagram


2.4 Si3N4:Ho3+/Yb3+ 分支纳米线的温度传感特性

用980 nm激光激发,调节温度为298~558 K,每次扫描温度提高20 K,Si3N4:Ho3+/Yb3+分支纳米线的光谱如图8a所示。可以看出,随着温度的提高所有发射峰光强随之降低:540 nm处的发射峰强度降至7.44%,660 nm处的发射峰强度降至30.53%。发射峰强度降低的程度,可归因于温度的提高使晶格内声子的振动加剧。声子的振动加剧使非辐射弛豫几率显著提高,过剩能量通过热耗散释放抑制了UC发光效率[26,37,38]。两处峰强度变化的不同,归因于5F45S2上的电子经历非辐射弛豫到5F5,提高了5F5能级的电子密度,5F55I8的弛豫减缓了660 nm发射峰强度的降低。

图8

图8   Si3N4:Ho3+/Yb3+分支纳米线在不同温度的UC发射光谱、各发射峰强度与温度的关系,660 nm处发射峰与540 nm处发射峰的比值作为温度的函数和拟合曲线以及相对灵敏度的计算值

Fig.8   Up-conversion emission spectra of Si3N4:Ho3+/Yb3+ branched nanowires at different temperatures (a), changes in the intensity of each emission peak with temperature (b), the ratio of the emission peak at 660 nm to the emission peak at 540 nm as a function of temperature and the fitting curve (c), and the calculated relative sensitivity (d)


图8b给出了两个峰的峰值随温度的变化,图8c给出了作为温度函数的FIR在660 nm处的红光发射强度峰值与在540 nm处的绿色光发射强度峰值。可以看出,随着温度的提高FIR随之线性上升,两者发射峰强度的比值与温度的关系为[39]

FIR=IRIG=I660I540=Ae-EkBT+C=Ae-BT+C

式中A为比例常数,E能级间距,kB为Boltzmann常数,T为温度,C为偏移量常数。

I660I540=16.62e-1897.62T+0.16

来自于对基于TCLs的FIR计算公式的修正。根据TCLs判断,Ho3+5F4/5S25F5的能级属于NTCLs,因此 式(2)应视为经验公式[39]。拟合结果如图8c所示,可见数据点和拟合曲线与 式(3)高度吻合。

图8c中的R2为0.992,表明理论拟合和实验数据高度吻合。NTCLs对温度响应的不同,有助于得到更高的温度相对灵敏度(Sr)[39]

Sr=1FIRdFIRdT

是评估温度传感器的关键指标。如图8d所示,相对灵敏度Sr随着温度的升高单调降低,且在298 K达到最大值2.13% K-1。此值优于表1中列出的大多数材料的Sr

表1   不同主体材料共掺杂稀土离子基于FIR的温度传感性能

Table 1  Temperature sensing performance based on the fluorescence intensity ratio (FIR) for rare-earth ions co-doped in different host materials

MaterialsTransitionTemperature range / KSr / % K-1Ref.
Sr9Y2W4O24:Ho3+/Yb3+5F4, 5S25I8; 5F55I8303-4530.91[21]
Na5Rb7Sc2(WO4)9:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-4980.90[22]
Gd3BWO9:Ho3+/Yb3+5F4, 5S25I8; 5F55I8300-6000.72[29]
Bi2WO6:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-5731.43[39]
LaNbO4:Nd3+/Ho3+/Yb3+5F4, 5S25I8; 5F55I8303-6932.04[40]
Ba9Y2Si6O24:Ho3+/Yb3+5F4, 5S25I8; 5F55I8293-5530.88[41]
YAG:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-4480.77[42]
AlN:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-5032.73[43]
NaLaMgWO6:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-5480.89[44]
PSN-PMN-PT:Ho3+/Yb3+5F4, 5S25I8; 5F55I893-4930.6[45]
Si3N4:Ho3+/Yb3+5F4, 5S25I8; 5F55I8298-5582.13This work

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2.5 Si3N4:Ho3+/Yb3+ 分支纳米线的荧光衰减

随着温度的提高Si3N4:Ho3+/Yb3+分支纳米线540 nm处的荧光衰减行为如图9所示。用波长为980 nm的激光激发,Si3N4:Ho3+/Yb3+分支纳米线所有的衰减曲线都可拟合为三指数函数[41]

It=A1e-tτ1+A2e-tτ2+A3e-tτ3

其中τ1τ2τ3为衰减寿命,A1A2A3为相应的拟合常数,平均衰减寿命为[41]

τ=A1τ12+A2τ22+A3τ32A1τ1+A2τ2+A3τ3

随着温度从298 K提高到558 K,540 nm处发射峰的平均衰减寿命从67.63 μs单调降至31.7 μs。其原因是,温度的升高使晶格振动剧烈,从而使非辐射弛豫过渡增加而降低了5S25F4的衰减寿命。根据Ho3+平均寿命与温度的关系,Ho3+5F45S2态的荧光寿命可作为温度传感的参考指标。因此,不同温度的平均寿命实验数据可很好地用Arkenius型指数方程[46]

1τT=1τ1+Ce-ΔEkBT

拟合,其中τ (T)和τ分别是温度为T和0 K时的荧光衰减寿命,ΔE为发射能级与相邻上一级能级之间的能量差。如图10a所示,两个发射峰的1(T)数据拟合良好,R2为0.993,通过以下函数表示

1τ=0.009+0.1225e-984.38T

相应的荧光寿命随温度变化的相对灵敏度为[46]

Sr=dττdT=1-ττ0ΔEkBT2

荧光寿命相对灵敏度的计算值,如图10b所示。可以看出,荧光寿命的相对灵敏度明显小于光强比的相对灵敏度。随着温度的升高荧光寿命的相对灵敏度呈单调递减的趋势。540 nm处的发射峰,其相对灵敏度在298 K达到最大值1.10% K-1,在558 K达到最小值0.315% K-1表2中列出其他材料的温度敏感性,可见Si3N4:Ho3+/Yb3+优于大部分材料。

图9

图9   980 nm激发下Si3N4:Ho3+/Yb3+分支纳米线在不同温度下540 nm发射峰的衰减曲线

Fig.9   Decay curves of Si3N4:Ho3+/Yb3+ branched nano-wires at different temperatures under 980 nm excitation for emission peaks at 540 nm


表2   不同主体材料共掺杂稀土离子基于荧光寿命的温度传感性能

Table 2  Temperature sensing performance based on fluorescence lifetime for rare-earth ions co-doped in different host materials

MaterialsTransitionTemperature range / KSr / % K-1Ref.
Ba9Y2Si6O24:Ho3+/Yb3+2H11/24I15/2303-4830.14[41]
AlN:Ho3+/Yb3+5F55I8298-5030.43[42]
Ca2MgWO6:Er3+/Yb3+4S3/24I15/2303-5730.11[46]
Na2YMg2(VO4):Er3+/Yb3+4S3/24I15/2323-5730.087[47]
Sc2Mo3O12:Er3+/Yb3+4S3/24I15/2300-5601.28[48]
LiGa5O8:Cr3+4A24T2301-4630.58[49]
KLu(WO4)2:Ho3+/Yb3+5F4, 5S25I8296-6730.23[50]
β-PbF2GC3:Tm3+/Yb3+1G43H6308-4880.46[51]
YAG:Mn3+/Mn4+5T22E120-5703.34[52]
ZnAl2O4:Mn2+/Ho3+/Yb3+5F4, 5S25I880-3001.89[53]
CYS:Tm3+/Yb3+3F2, 3S33H4293-5530.40[54]
Si3N4:Ho3+/Yb3+5F4, 5S25I8298-5581.10This work

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图10

图10   540 nm发射峰荧光寿命和温度双倒数函数及拟合曲线,以及相对灵敏度的计算值

Fig.10   540 nm emission peak (a) fluorescence lifetime and temperature double reciprocal function and fitted curve, the relative sensitivities of the peaks are calculated in (b), respectively


以上结果表明,Si3N4:Ho3+/Yb3+分支纳米线的发光性能优异,基于FIR和FL的双模式温度敏感性可实现自校准测温,使温度的测量结果更加准确。在两种模式下,Si3N4:Ho3+/Yb3+分支纳米线的温敏相对灵敏度都比较高。Si3N4:Ho3+/Yb3+分支纳米线独特的一维纳米结构,使其表面有大量的缺陷。这些缺陷加强了电子-声子相互作用和FIR随温度的变化,提高了Si3N4:Ho3+/Yb3+分支纳米线温敏传感的相对灵敏度。

3 结论

用等离子体电弧法可合成具有良好的单晶特性的Si3N4:Ho3+/Yb3+分支纳米线。在980 nm激光激发下Si3N4: Ho3+/Yb3+分支纳米线表现出的不同颜色的发射峰分别源于Ho3+5F4, 5S25I85F55I85F45I7能级跃迁。Ho3+的绿光和红光发射都是双光子过程。关于Si3N4:Ho3+/Yb3+分支纳米线的温度传感性能,FIR和FL都具有较高的相对灵敏度,与单一FIR的温度传感相比,这种双信号同时响应的测温方案可避免偶然因素对测温结果的干扰而使测温的准确性提高。

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An N, Zhou H L, Zhu K S, et al.

Improved temperature sensing performance of YAG:Ho3+/Yb3+ by doping Ce3+ ions based on up-conversion luminescence

[J]. J. Alloy. Compd., 2020, 843: 156057

DOI      URL     [本文引用: 2]

Wang J Q, Gao T T, Zheng H L, et al.

Strong green up-conversion luminescence and optical thermometry of Ho3+/Yb3+ co-doped AlN submicron towers

[J]. Ceram. Int., 2024, 50(10): 17181

DOI      URL     [本文引用: 1]

Zhang J, Jin C.

Electronic structure, upconversion luminescence and optical temperature sensing behavior of Yb3+-Er3+/Ho3+ doped NaLaMgWO6

[J]. J. Alloy. Compd., 2019, 783: 84

DOI      [本文引用: 1]

To develop new upconversion (UC) phosphors of high sensitivity for temperature sensing, a series of Yb3+-Er3+ and Yb3+-Ho3+ doped NaLaMgWO6 (NLMW) samples were designed via solid-state reaction method. The phase purity was examined by XRD patterns, indicating the obtained samples are all single-phase. The morphology was characterized by SEM and TEM techniques, revealing smooth particle surface. The electronic structure of NLMW was analyzed theoretically, and the optical bandgap obtained was compared with the experimental results. Upon 980 nm excitation, the characteristic transitions of Er(3+ )and Ho3+ were found, and their optimal concentrations were determined to be 2 and 3 mol%, respectively. By investigating the temperature-dependence of NLMW:0.1 Yb3+,0.02Er(3+), it was found that the thermally-coupled (2)H(11/2 )and S-4(3/2) levels of Er3+ cause a large fluorescence intensity ratio (FIR) for 528 and 550 nm emissions, which can generate a high absolute sensitivity (0.0107 K-1 at 508 K). The corresponding explanation was given by using the dependence of UC emissions on excitation power density. For the NLMW:0.1 Yb3+,0.03Ho(3+) phosphor, the non-thermally-coupled (F-5(4), S-5(2)) and (5)F(5 )levels were employed to character the temperature-sensing behavior of Ho3+. High absolute sensitivity of 8.9 x 10(-3) K-1 was gained at 548 K. The reason for the different change of 543 and 658 nm emissions intensities with temperature was conducted by the phonon-electron coupling. (C) 2018 Elsevier B.V.

He A G, Xi Z Z, Li X J, et al.

Temperature dependence of upconversion luminescence and sensing sensitivity of Ho3+/Yb3+ modified PSN-PMN-PT crystals

[J]. J. Alloy. Compd., 2019, 803: 450

DOI      URL     [本文引用: 1]

Jiang Y C, Tong Y, Chen S Y Z, et al.

A three-mode self-referenced optical thermometry based on up-conversion luminescence of Ca2MgWO6:Er3+, Yb3+ phosphors

[J]. Chem. Eng. J., 2021, 413: 127470

DOI      URL     [本文引用: 3]

Tong Y, Zhang W N, Wei R F, et al.

Na2YMg2(VO4)3: Er3+, Yb3+ phosphors: up-conversion and optical thermometry

[J]. Ceram. Int., 2021, 47(2): 2600

DOI      [本文引用: 1]

Herein, Na2YMg2(VO4)(3):Er3+,Yb3+ phosphors are reported for up-conversion (UC) luminescent material as optical thermometry relied on fluorescence intensity ratio (FIR) and fluorescence lifetime. Their structures, UC luminescent properties and temperature sensing properties have been systematically investigated. Heavy doping of Er3+ and Yb3+ ions with maximal content of 59% is realized, which is beneficial to obtain highly efficient UC luminescence. Excited by 980 nm laser, Er3+ and Er3+,Yb3+ doped phosphors give 525, 550 and 660 nm emissions, which are originated from H-2(11/2), S-4(3/2) and F-4(9/2) -> I-4(15/2) transitions of Er3+ ions, respectively. The reasonable UC mechanism is discussed in detail. What's more, the UC emissions of all samples dominate in green area from thermally coupled H-2(11/2)/S-4(3/2) levels of Er3+ ions, which is helpful to obtain better temperature sensing performances. And the maximal relative sensitivities of FIR and fluorescence lifetime methods reach 1.104 %K-1 (303 K) and 0.087 %K-1 (412 K), respectively. All results manifest that Na2YMg2(VO4)(3):Er3+,Yb3+ phosphors are good potential alternative for optical temperature sensors.

Chen H S, An Y, Wang Y H, et al.

Thermally enhanced upconversion luminescence in Sc2Mo3O12:Yb/Er thin film toward versatile and high-sensitivity luminescent temperature sensing

[J]. Sci. China Mater., 2025, 68: 2299

DOI      [本文引用: 1]

Chen D Q, Liu S, Xu W, et al.

Yb3+/Ln3+/Cr3+ (Ln = Er, Ho) doped transparent glass ceramics: crystallization, Ln3+ sensitized Cr3+ upconversion emission and multi-modal temperature sensing

[J]. J. Mater. Chem., 2017, 5C(45) : 11769

[本文引用: 1]

Savchuk O A, Carvajal J J, Pujol M C, et al.

Ho, Yb:KLu(WO4)2 nanoparticles: a versatile material for multiple thermal sensing purposes by luminescent thermometry

[J]. J. Phys. Chem., 2015, 119C(32) : 18546

[本文引用: 1]

Fu Y T, Zhao L J, Guo Y, et al.

Up-conversion luminescence lifetime thermometry based on the 1G4 state of Tm3+ modulated by cross relaxation processes

[J]. Dalton Trans., 2019, 48(42): 16034

DOI      URL     [本文引用: 1]

Marciniak L, Trejgis K.

Luminescence lifetime thermometry with Mn3+-Mn4+ co-doped nanocrystals

[J]. J. Mater. Chem., 2018, 6C(26) : 7092

[本文引用: 1]

Balhara A, Gupta S K, Debnath A K, et al.

Utilizing energy transfer in Mn2+/Ho3+/Yb3+ tri-doped ZnAl2O4 nanophosphors for tunable luminescence and highly sensitive visual cryogenic thermometry

[J]. ACS Omega, 2023, 8(33): 30459

DOI      PMID      [本文引用: 1]

Lanthanide (Ln)-doped upconversion (UC) phosphors converting near-infrared (NIR) light to visible light hold very high promise toward biomedical applications. The scientific findings on luminescent thermometers revealed their superiority for noninvasive thermal sensing. However, only few reports showcase their potential for applications in extreme conditions (temperatures below -70 °C) restricted by low thermal sensitivity. Here, we demonstrate the tailoring of luminescence properties via introducing Ho-Mn energy transfer (ET) routes with judicious codoping of Mn ions in ZnAlO/Ho,Yb phosphor. Preferentially, a singular red UC emission is required to improve the bioimaging sensitivity and minimize tissue damage. We could attain UC emission with 94% red component by a two-photon UC process. Higher temperature annealing brings the color coordinates to the green domain, highlighting the potential for color-tunable luminescence switch. Moreover, this work investigates the thermometric properties of ZnAlO/Yb, Ho in the range of 80-300 K and influence of inducing extra ET pathways by Mn codoping. Interestingly, the luminescence intensities for nonthermally coupled (F,S) and the F radiative transitions of Ho ions display opposite behavior at 80 and 300 K, which revealed competition between temperature-sensitive decay pathways. The codoping of Mn ions is fruitful in causing a fourfold increase of absolute sensitivity. Notably, the color tunability from green through yellow to red is helpful in rough temperature estimation by naked eyes. The maximum relative () and absolute sensitivities () were estimated to be 1.89% K (140 K) and 0.0734 K (300 K), respectively. Even at 80 K, a of 0.00447 K and of 0.6025% K were achievable in our case, which are higher than most of the other Ln-based systems. The above-mentioned results demonstrate the potential of ZnAlO/Yb,Ho for cryogenic optical thermometry and a strategy to design new Ln-based UC thermometers by taking advantage of ET routes.© 2023 The Authors. Published by American Chemical Society.

An S S, Zhang J.

Temperature sensing based on upconversion luminescence of Er3+/Tm3+-Yb3+ doped Ca4Y6Si4O24 phosphors

[J]. Opt. Mater., 2018, 81: 122

DOI      URL     [本文引用: 1]

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