Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线的制备及其温度传感性能
Fabrication and Temperature Sensing Performance of Ho3+/Yb3+ Co-doped α-Si3N4 Branched Nanowires
Si3N4(Si3N4:Ho3+/Yb3+)分支纳米线的制备及其温度传感性能 |
| 周明晗, 陈双龙, 王秋实, 王雪娇, 刘才龙 |
|
Fabrication and Temperature Sensing Performance of Ho3+/Yb3+ Co-doped α-Si3N4 Branched Nanowires |
| ZHOU Minghan, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong |
| 图8 Si3N4:Ho3+/Yb3+分支纳米线在不同温度的UC发射光谱、各发射峰强度与温度的关系，660 nm处发射峰与540 nm处发射峰的比值作为温度的函数和拟合曲线以及相对灵敏度的计算值 |
| Fig.8 Up-conversion emission spectra of Si3N4:Ho3+/Yb3+ branched nanowires at different temperatures (a), changes in the intensity of each emission peak with temperature (b), the ratio of the emission peak at 660 nm to the emission peak at 540 nm as a function of temperature and the fitting curve (c), and the calculated relative sensitivity (d) |
|
|