Systems simultaneously exhibiting superconductivity and spin-orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, yielding an antisymmetric form of spin-orbit coupling that admits both spin-singlet and spin-triplet components of the superconducting wavefunction. Here, we present an experimental and theoretical study of two intrinsic TMD superconductors with large spin-orbit coupling in the atomic layer limit, metallic 2H-TaS2 and 2H-NbSe2. We investigate the superconducting properties as the material is reduced to monolayer thickness and show that high-field measurements point to the largest upper critical field thus reported for an intrinsic TMD superconductor. In few-layer samples, we find the enhancement of the upper critical field is sustained by the dominance of spin-orbit coupling over weak interlayer coupling, providing additional candidate systems for supporting unconventional superconducting states in two dimensions.

Shift current is a steady-state photocurrent generated in non-centrosymmetric single crystals and has been considered to be one of the major origins of the bulk photovoltaic effect. The mechanism of this effect is the transfer of photogenerated charges by the shift of the wave functions, and its amplitude is closely related to the polarization of the electronic origin. Here, we report the photovoltaic effect in an organic molecular crystal tetrathiafulvalene-p-chloranil with a large ferroelectric polarization mostly induced by the intermolecular charge transfer. We observe a fairly large zero-bias photocurrent with visible-light irradiation and switching of the current direction by the reversal of the polarization. Furthermore, we reveal that the travel distance of photocarriers exceeds 200 mu m. These results unveil distinct features of the shift current and the potential application of ferroelectric organic molecular compounds for novel optoelectric devices.

Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here, we report the vertical integration of multi-heterostructures of layered materials for the fabrication of a new generation of vertical field-effect transistors (VFETs) with a room temperature on-off ratio > 10(3) and a high current density of up to 5,000 A cm(-2). An n-channel VFET is created by sandwiching few-layer MoS(2) as the semiconducting channel between a monolayer graphene sheet and a metal thin film. This approach offers a general strategy for the vertical integration of p- and n-channel transistors for high-performance logic applications. As an example, we demonstrate a complementary inverter with a larger-than-unity voltage gain by vertically stacking graphene, Bi(2)Sr(2)Co(2)O(8) (p-channel), graphene, MoS(2) (n-channel) and a metal thin film in sequence. The ability to simultaneously achieve a high on-off ratio, a high current density and a logic function in such vertically stacked multi-heterostructures can open up possibilities for three-dimensional integration in future electronics.

Semiconductor moiré superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moiré wavelengths, where interactions are most dominant. In this study, we conducted local electronic compressibility measurements of twisted bilayer WSe (tWSe) at small twist angles. We demonstrated multiple topological bands that host a series of Chern insulators at zero magnetic field near a "magic angle" around 1.23°. Using a locally applied electric field, we induced a topological quantum-phase transition at one hole per moiré unit cell. Our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe, demonstrating a tunable platform for strongly correlated topological phases.

Nowadays, there is a surge of research reports on photovoltaic cells and photodetectors based on van der Waals (vdW) heterojunction. However, there are very few reports on the simultaneous realization of photoelectric conversion and storage in a single device. Herein, a simple method was utilized to successfully prepare a van der Waals heterojunction with a chargeable photoconductivity (CPC) effect between black phosphorus and quasi-two-dimensional electron gas. After a single optical illumination, the device generated photocarriers and stored them for up to 5 days, followed by a bias voltage applied in the dark to release a large photocurrent of 1.0 mA and a current ratio of up to 10 before and after full optical charging. Firstly, experiments showed that the CPC effect critical temperature was approximately 100 K, which is 20 K higher than the highest temperature reported in the literature. Secondly, the CPC effect spectral range of the device increases from 405 nm-808 nm to 405 nm-1064 nm, including even general daylight, indicating that the device's responsivity and photon collection ability are more prominent. This discovery provides a new direction, to the best of our knowledge, for storage photoconductors and high-efficiency photoelectric storage devices.

Bismuth ferrite (BiFeO) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements. Using nitrogen vacancy-based diamond magnetometry, we observe the magnetic spin cycloid structure of BiFeO in real space. This structure is magnetoelectrically coupled through symmetry to the ferroelectric polarization and this relationship is maintained through electric field switching. Through a combination of in-plane and out-of-plane electrical switching, coupled with ab initio studies, we have discovered that the epitaxy from the substrate imposes a magnetoelastic anisotropy on the spin cycloid, which establishes preferred cycloid propagation directions. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the spin spiral propagation vector to changes to specific switching events.© 2024. The Author(s).

Skyrmions can form regular arrangements, so-called skyrmion crystals (SkXs). A mode with multiple wavevectors q then describes the arrangement. While magnetic SkXs, which can emerge in the presence of Dzyaloshinskii-Moriya interaction, are well established, polar skyrmion lattices are still elusive. Here we report the observation of polar SkXs with a well-defined double-q state in ultrathin BiFeO films on LaAlO. The compressive strain induced by the LaAlO substrate yields a dipolar topological texture with a periodic arrangement of skyrmions. The square-like superstructure with a lattice constant of 2.68 nm features a periodic modulation of polarization fields and topological charge density. The film furthermore exhibits an enhanced electromechanical response with an increased converse piezoelectric coefficient (d) compared with SkX-free films. Transmission electron microscopy experiments in combination with phase-field simulations indicate that the dipole skyrmion texture results from the interference of two orthogonal single-q dipole patterns. We anticipate that the interference of multiple wavevectors may lead to a diversity of topological crystals with a variety of symmetries and lattice constants.© 2025. The Author(s), under exclusive licence to Springer Nature Limited.

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe ) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe) monolayer, while for thicker films it could originate from a combination of vdW MnSe and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSe films on GaSe and SnSe epilayers show ferromagnetic ordering with a large saturation magnetization of ∼4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe. Growing MnSe films on GaSe up to a high thickness (∼40 nm) produces α-MnSe(111) and an enhanced magnetic moment (∼2×) compared to the monolayer MnSe samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.

We have achieved a certified 25.1% conversion efficiency in a large area (151.9 cm2) heterojunction (HJ) crystalline Si (c-Si) solar cell with amorphous Si (a-Si) passivation layer. This efficiency is a world record in a both-side-contacted c-Si solar cell. Our high efficiency HJ c-Si solar cells are investigated from the standpoint of the effective minority carrier lifetime (τe), and the impact of τe on fill factor (FF) is discussed. The τe measurements of our high efficiency HJ c-Si solar cells reveal that τe at an injection level corresponding to an operation point of maximum power is dominated by the carrier recombination at the a-Si/c-Si interface. By optimization of the process conditions, the carrier recombination at the a-Si/c-Si interface is reduced, which leads to an improvement of the FF by an absolute value of 2.7%, and a conversion efficiency of 25.1% has been achieved. These results indicate that the reduction of carrier recombination centers at the a-Si/c-Si interface should be one of the most crucial issues for further improvement of FF even in the HJ c-Si solar cells with efficiency over 25%.

Most of the current methods for the synthesis of two-dimensional materials (2DMs) require temperatures not compatible with traditional back-end-of-line (BEOL) processes in semiconductor industry (450 °C). Here, we report a general BiOCl-assisted chemical vapor deposition (CVD) approach for the low-temperature synthesis of 27 ultrathin 2DMs. In particular, by mixing BiOCl with selected metal powders to produce volatile intermediates, we show that ultrathin 2DMs can be produced at 280-500 °C, which are ~200-300 °C lower than the temperatures required for salt-assisted CVD processes. In-depth characterizations and theoretical calculations reveal the low-temperature processes promoting 2D growth and the oxygen-inhibited synthetic mechanism ensuring the formation of ultrathin nonlayered 2DMs. We demonstrate that the resulting 2DMs exhibit electrical, magnetic and optoelectronic properties comparable to those of 2DMs grown at much higher temperatures. The general low-temperature preparation of ultrathin 2DMs defines a rich material platform for exploring exotic physics and facile BEOL integration in semiconductor industry.© 2023. The Author(s).