WSe2/BiFeO3/Q2DEG混合异质结的光电性能
Photoelectric Properties of WSe2/BiFeO3/Q2DEG Hybrid Heterojunctions
WSe2/BiFeO3/Q2DEG混合异质结的光电性能 |
| 邹俊, 赵润, 戴称民 |
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Photoelectric Properties of WSe2/BiFeO3/Q2DEG Hybrid Heterojunctions |
| ZOU Jun, ZHAO Run, DAI Chenmin |
| 图4 器件在20 K的光电开关特性 |
| Fig.4 Photoresponse switching characteristics of the device，the switching behavior under various laser illuminations are illustrated with (a) 405 nm, (b) 447 nm, and (c) 532 nm at a forward bias voltage of 4 V, (d) response time |
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