Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD

doi:10.11901/1005.3093.2020.142

Chinese Journal of Materials Research

2021, Vol. 35

Issue (2): 154-160 DOI: 10.11901/1005.3093.2020.142

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Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD

XIONG Wenwen, HE Song(

), ZHENG Songsheng, CHENG Qijin, SHENG Hongxun, CHEN Chao(

)

College of Energy, Xiamen University, Xiamen 361102, China

Cite this article:

XIONG Wenwen, HE Song, ZHENG Songsheng, CHENG Qijin, SHENG Hongxun, CHEN Chao. Preparation of Diamond-like Carbon Films on Top and Bottom Plates by RF-PECVD. Chinese Journal of Materials Research, 2021, 35(2): 154-160.

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Abstract

Diamond-like carbon (DLC) thin films were deposited on silicon plates, placed at the top and bottom of the reaction chamber respectively, by plasma-enhanced chemical vapor deposition (RF-PECVD). Various DLC thin films were obtained by changing the flow ratio of CH₄ and $A r (V C H 4 / V A r)$ . The structure, surface roughness, surface morphology and hardness of DLC films were characterized by means of Raman spectroscopy and other methods. The results show that DLC films with different $S s p 3 / S s p 2$ ratios could be prepared on bottom plates by changing $V C H 4 / V A r$ , while the $S s p 3 / S s p 2$ ratio kept constant for DLC films prepared on top plate. The films deposited on top plates placed near the gas inlet are smoother, denser, harder and more reproducible than that on bottom plates placed near the gas outlet.

Key words: structure and properties of materials stable preparation RF-PECVD DLC thin films flow ratio substrate position

Received: 29 April 2020

ZTFLH:

TB34

Fund: Department of Science and Technology of Fujian Province(2017H0038)

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	Wenwen XIONG
	Song HE
	Songsheng ZHENG
	Qijin CHENG
	Hongxun SHENG
	Chao CHEN

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.142 OR https://www.cjmr.org/EN/Y2021/V35/I2/154

Fig.1 Schematic diagram of RF-PECVD chamber str-ucture

Fig.2 Raman spectra and fitting peak of DLC films prepared on top (a) and bottom (b) plate for various $V C H 4 / V A r$

$V C H 4 / V A r$	Top plate D bond /cm^-1		Top plate G bond /cm^-1		Bottom plate D bond /cm^-1		Bottom plate G bond /cm^-1
$V C H 4 / V A r$	Position	FWHM	Position	FWHM	Position	FWHM	Position	FWHM
1:3	1462	153.89	1558	109.62	1365	45.78	1605	39.00
1:2	1461	155.21	1558	111.79	1332	78.83	1598	35.00
1:1	1465	153.39	1560	110.70	1334	86.28	1602	55.70
3:1	1469	153.88	1557	110.8	1332	104.79	1605	63.89
5:1	1462	154.66	1559	110.79	1342	84.32	1602	53.28
7:1	1457	153.79	1557	109.43	1339	23.09	1602	20.60
8:1	1468	153.70	1560	110.34	1355	14.28	1593	21.53

Table 1 Position and full width half maximum of the Raman peak

Fig.3 Effect of $V C H 4 / V A r$ on hardness of DLC films prepared on top plate and bottom plate

Fig.4 Effect of $V C H 4 / V A r$ on $S s p 3 / S s p 2$ of DLC films prepared on top plate and bottom plate

Fig.5 Image of the mechanism of preparing DLC film with CH₄ as carbon source by RF-PECVD

Fig.6 Diagram of plasma distribution in RF-PECVD chamber

$V C H 4 / V A r$	Deposition time/min	Thickness /nm		Deposition rate /nm·min^-1
$V C H 4 / V A r$	Deposition time/min	Top plate	Bottom plate	Top plate	Bottom plate
1:3	30	557.68	127.68	18.60	4.25
1:2	30	587.00	174.32	19.57	5.81
1:1	30	646.55	215.50	21.55	7.18
3:1	30	854.86	332.71	28.50	11.09
5:1	30	791.96	301.56	26.40	10.05
7:1	30	626.14	129.12	20.87	4.30
8:1	30	386.91	47.32	12.90	1.58

Table 2 Film thickness and deposition rate

Fig.7 Effect of $V C H 4 / V A r$ on surface roughness of DLC films prepared on top plate and bottom plate

Fig.8 AFM images of DLC film prepared on top (a) and bottom (b) plate when $V C H 4 / V A r$ was 1

Fig.9 SEM images of DLC film prepared on top (a) and bottom (b) plate when $V C H 4 / V A r$ was 1

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