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| Evolution of Helium-Related Defects in Helium -Containing Nanocrystalline Titanium Films After High Temperature Annealing |
| LI Yue1 DENG Aihong1** LIU Li2 WANG Kang1 XIE Sha1 |
1. Department of Physics, Sichuan University, Chengdu 610064
2. Computer College, Southwest Nation University, Chengdu 610041 |
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Cite this article:
LI Yue DENG Aihong** LIU Li WANG Kang XIE Sha. Evolution of Helium-Related Defects in Helium -Containing Nanocrystalline Titanium Films After High Temperature Annealing. Chinese Journal of Materials Research, 2013, 27(6): 610-614.
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Abstract The microstructure of annealing He-Ti films and evolution of corresponding helium-related defects were studied by X-ray diffraction (XRD) and slow positron beam analysis (SPBA) respectively. Results of XRD indicate that Ti reacts with Si to form the stable polycrystalline TiSi2 compound after high temperature annealing. The preferred orientation of TiSi2 could be mainly affected by the incorporation of helium atoms, while helium atoms introduced weakly influence on the grain sizes of TiSi2 compound. The results of SPBA demonstrate that helium-related defects increase with the increasing of the He concentration at room temperature. Furthermore, when He concentration is below 5%, except for 2% sample the concentrations of He-related defects raise correspondingly as the helium concentration grows after annealing. However, when the He concentration reaches up to 14%, high-concentration helium atoms, helium-filled vacancy clusters and small size of He bubbles tend to migrate and coalesce to form larger He bubbles under high temperature annealing conditions, thus small helium-related defects which are close to surrounding of larger bubbles will accordingly reduce.
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| Fund: Supported by the National Natural Science Foundation of China No. 11275132 |
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