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| Aluminum Evaporation from Metallurgical Silicon in Electron Beam Melting Process |
| DONG Wei1,2, WANG Qiang1,2, PENG Xu1,2, TAN Yi1,2, JIANG Dachuan1,2, LI Guobin1 |
1.Key Laboratory for Solar Energy Photovoltaic of Liaoning Province, Dalian 116204
2.School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 |
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Cite this article:
DONG Wei WANG Qiang PENG Xu TAN Yi JIANG Dachuan LI Guobin. Aluminum Evaporation from Metallurgical Silicon in Electron Beam Melting Process. Chin J Mater Res, 2010, 24(6): 592-596.
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Abstract Metallurgical grade silicon was purified by electron beam melting (EBM) method. The distribution of aluminum in the ingot was found that aluminum was dragged from the bottom to the top and from the edge to the center of the ingot. The aluminum content in the edge was the lowest, even lower than the detection limit (1×10−5%) of ICP–AES. The evaporation of aluminum during EBM process was studied both theoretically and experimentally. The relationship between the removal efficiency for aluminum and the surface temperature of the melting silicon and melting time was deduced from Langmuir’s equation and Henry law. It showed that the removal efficiency of impurity aluminum increased with the increase of the melting time and the surface temperature of the melting silicon. Good agreement was found between the calculated value and the measured value.
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Received: 19 April 2010
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