The influence of La–doping on the properties of TiO2 thin films

Chin J Mater Res

2009, Vol. 23

Issue (5): 546-549 DOI:

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The influence of La–doping on the properties of TiO₂ thin films

LI Jinze¹; HUANG Jie¹; CHEN Hao²; LI Yiyu²; SU Xiaodong¹

1.Jiangsu Key Laboratory of Thin Films; Department of Physics; Soochow University; Suzhou 215006
2.School of Optometry and Ophthalmology; Wenzhou Medical College; Wenzhou 325027

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LI Jinze HUANG Jie CHEN Hao LI Yiyu SU Xiaodong. The influence of La–doping on the properties of TiO₂ thin films. Chin J Mater Res, 2009, 23(5): 546-549.

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Abstract

Anatase TiO₂ and La–doped TiO₂ thin films have been prepared by using sol–gol method and post–annealing at 500 ". The crystal structure, morphology and photocatalytic activity were investigated using X–ray diffraction (XRD), atomic force microscope (AFM), UV–VIS spectrophotometer and contact angle meters. The results showed that the doping of La could improve the crystallization of TiO₂, and increase the band gap of TiO₂ film. However, the La will act as the recombination center of electron–hole, resulting in the increase of the contact angle of TiO₂films.

Key words: inorganic non–metallic materials sol–gol TiO₂thin film La doping, contact angle

Received: 24 February 2009

ZTFLH:

TB321

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Supported by Natural Science Fund for Colleges and Universities in Jiangsu Province No.08KJB140007.

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https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y2009/V23/I5/546

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