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Chin J Mater Res  1997, Vol. 11 Issue (4): 337-345    DOI:
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PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS
WANG Hongmei;KONG Meiying (Institute of Semiconductors; Chinese Academy of Sciences)
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WANG Hongmei;KONG Meiying (Institute of Semiconductors; Chinese Academy of Sciences). PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS. Chin J Mater Res, 1997, 11(4): 337-345.

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Abstract  This paper reviews the study on the classification, characteristics, origination and eliminating methods of surface oval defects on Molecular Epitaxy Beam (MBE) grown materials. Several possible origins such as gallium droplets, gallium oxide and substrat
Key words:  MBE oval defects Ga droplets Ga oxide substrate contanimation     
Received:  25 August 1997     
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1C.E.C.Wood,L.Rathbun,H.Ohno,D.DeSimone,J.Cryst.Growth.51(2),299(1981)
2. Y.G.Chai, R.Chow, Appl.Phys.Lett 38(10),796(1981)
3 .S.Izumi,N.Hayafuji,T.Sonoda,S.Takamiya,S.Mitsui,J.Cryst.Growth.150(1),7(1995)
4.K.Nanbu,J.Saito,T.Ishikawa,K.Kondo,A.Shibatomi,J.Electrochem.Soc.133(3),601(1986)
5.K.Fujwara,K.Kanamoto,YN.Ohta,Y.Tokuda,T.Nakayama,J.Cryst.Growth.80(1),104(1987)
6 Y.G.Chai,Y.C.Pao,T.Hierl,Appl.Phys.Lett.47(12),1327(1985)
7 .Y.H.Wang, W.C.Liu, C.Y.Chang, SrtLiao, J.Vac Sci.Technol B4(1),30(1986)
8. J.C.M.Hwang,T.M.Brennan,A.Y.Cho,J.Electrochem.Soc 130(2),493(1983)
9. W.C.Liu,D.F.Guo,C.Y.Sun,W-S.Lour,J.Cryst.Growth.114(4),700(1991)
10. N.Chand, S.N.G.Chu, J.Cryst.Growth 104(2),485(1990)
11.M.Shinohara,T.Ito,K.Wada,Y.Imamura、Jpn.J.Appl.Phys.23(6),L371(1984)
12.Y.Nishikawa,K.Kanamoto,Y.Tokuda,K.Fujiwara,T.Nakayma,Jpn.J. Appl.Phys.25(6),908(1986)
13.T.Nakamura,K.Nanbu,T.Ishikawa,K.Kondo,J.Appl.Phys.64(4),2164(1988)
14 . M.A.Cotta, R.A.Hamm, S.N.G.Chu, L.R.Harriott, H.Temkin, Appl Phys. Lett 66(18),2358(1995)
15.A Salokatve,J.Varrio,J.Lammasniemi,H.Asonen,M.Pessa,Appl.Phys.Lett.51(17),1340(1987)
16.Y.C.Chow, C.T.Lee, Jpn.J.Appl.Phys 26(5),774(1987)
17.M.Shinohara, T.Ito, Y.Imamura,J.Appl.Phys 58(9),3449(1985)
18.M.Shinohara,T.Ito,J.Appl.Phys.65(11),4260(1989)
19.H.Kawada,S.Shirayone,K.Takahashi ,J.Cryst.Growth.128(1-4),550(1993)
20.Y.H.Wang ,W.C.Liu,S.A.Liao,K.Y.Cheng ,C.Y.Chang,Jan.J.Appl.Phys.24(5),(1985)628
21. Y.Suzuki, M.Seki, Y.Horikoshi, H.Okamoto, Jpn.J.Appl.Phys 23(2),164(1984)
22.H.Saito,J.O.Borland,H.Asahi,H.Nagai,K、Nawata,J.Cryst.Growth.64(3),521(1983)
23. H.Kakibayashi, F.Nagata, Y.Katayama , Y.Shirski, Jpn.J.Appl.Phys. 23(11),L846(1984)
24.M.Bafleur, A.Munoz-yague, Rocher, J.Cryst.Growth. 59(3),531(1982)
25. T.Ito, M.Shinohara, Y.Imamura, Jpn.J.Appl.Phys, 23(8),L524(1984)
26.S.L.Weng,Appl.Phys.Lett 49(6),345(1986)
27.C.T.Lee, Y.C.Chow, J.Cryst .Growth .91(1/ 2),169(1988)
28.P.E.Brunerneier,J.Vac.Sci.Technol. B9(5),2554(1991)
29.N.Chand,J.Vac.Sci.Technol B8(2),160(1990)
30.J.N.Miller, J.Vac.Sci.Technol. B10(2),803(1992)
31.K.Takahashi,H.Kawada,S.Ueda,M.Furuse,S.Shiayone,J.Vac.Sci.Technol.A9(3),854(1991)
32.S.Matteson, H.D.Shih, Appl.Phys.Lett 48(1),47(1986)
33. A.C.Papadopoulo, F.Alexandre, J.F.Bresse, Appl.Phys.Lett. 52(33),224(1988)
34.J.E.M.Haverkort, M.P.Schuwer, M.R.Leys,J.H.Wolter, Semicond.Sci.Technol 7(1),A59(1992)
35.J.Sapriel,J.Chavignon, F.Alexandre, Appl.Phys.Lett. 52(23),1970(1988)
36.W.T.Tsang,Appl.Phys.Lett. 46(11),1086(1985)
37.R.A.Stall,J.Zilko,V.swaminathan,N.Schumaker,J.Vac .Sci.Techonol.B3(2),524(1985)
38.T.Sonoda,M.Ito,K.Segawa,S.Takamiya,S.Mitsui,Jan.J.Appl.Phys.27(3),337(1988)
39.D.G.Schlom, W.S.Lee, T.Ma,J.S.Harris,Jr,J.Vac.Sci.Technol B7(2),296(1989)
40.N.Watanabe,T.Fukunaga,K.L.I.Kobayashi,H.Nakashima,Jpn.JAppl.Phys.24(7),L498(1985)
41.M.Metze,A.R.Calawa,J.G.Mavroides,J .Vac.Sci.Technol.B1(2),166(1983)
42.K.Akimoto,M.Dohsen,M.Arai,N.Watanabe,J.Cryst.Growth.73(1),117(1985)
43.P.D.Kirchner,J.M.Woodwall,J.L.Freeout ,G.D.Pettit, Appl,Phys Lett.38(6),427,(1981)
44. S.L.Weng,C.Webb,Y.G.Chai,S.G.Bandy,Appl.Phys.Lett.47(4),391(1985)
45.J.Massies ,J.P.Contour, J.Appl.Phys.58(2),806(1985)
46.H.Fronius,A.Fischer,K.Ploog,Jpn.J.Appl.Phys.25(2),L137(1986)
47.H.Fronius,A.Fischer,K.Ploog,J.Cryst.Growth.81(1-4),169(1987)
48. C.Y.Li,D.H.Zhang,J.Cryst.Cryst.Growth.165(1),15(1996)
49. S.Takagishi,H.Yao,H.Mori,J.Cryst.Growth.129(3/4),443(1993)
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