Chin J Mater Res  1995, Vol. 9 Issue (6): 535-538    DOI:

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THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

YAN Peiyu LI Longtu ZHANG Xiaowen(Tsinghua University)(Correspondent: YAN Peiyu;Dept.of Materials Science and Engineering;Tsinghua University;Beijing 100084)

YAN Peiyu LI Longtu ZHANG Xiaowen(Tsinghua University)(Correspondent: YAN Peiyu;Dept.of Materials Science and Engineering;Tsinghua University;Beijing 100084). THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS. Chin J Mater Res, 1995, 9(6): 535-538.

Abstract References Related Articles Recommended Metrics Download:  PDF(1445KB)  Export:  BibTeX | EndNote (RIS)       Abstract  PLZT thin films with good ferroelectric properties were fabricated using the sol-gel method on platinized silicon.The processing parameters affecting the microstructure and electric properties of thin films were investigated. Suitable concentration and hy Key words:  PLZT erroelectric thin film sol-gel      Received:  25 December 1995      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1995/V9/I6/535 1HaertlingGH,Ferroelectrics,1992;131:12KwokCK,DesuSB,JMaterRes,1993;8(2):3393DormansGJM,deKeuserM,vanVeidhovenPJ．MatResSocSympProc,1992,243:203, No related articles found! No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed