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Chin J Mater Res  1995, Vol. 9 Issue (5): 438-441    DOI:
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EFFECT OF DOPING V_2O_5 ON GAS SENSITIVE CHARACTER OF SnO_2
DENG Ximin; GUO Jin; HUANG Jinli (Guangxi Normal University)
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DENG Ximin; GUO Jin; HUANG Jinli (Guangxi Normal University). EFFECT OF DOPING V_2O_5 ON GAS SENSITIVE CHARACTER OF SnO_2. Chin J Mater Res, 1995, 9(5): 438-441.

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Abstract  Effect of doping V2O5 on resistance and stability of SnO2 element is studied. The experiment results show that the resistance drops when the V2O5 content is fewer than 0.56w.%, and the resistance rises when the V2O5 content is more than 0.56w.% and the st
Key words:  SnO_2 doping electric behaviour Front Molecular Orbital     
Received:  25 October 1995     
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1杨建红,王化章,尹周澜等.功能材料,1992;23(5):2842林化新,范淑华,孙金凤等.化学传感器,1993;13(2):143朱文会,徐甲强,颜克球等.应用科学学报,1993;11(2):1044陈春华,刘杏芹,徐文东等.传感技术学报1992;;5(4):175MullerE.ActaCryst,1984;B40:3596康昌鹤,唐省吾.气湿敏感器件及其应用.北京:科学出版社,1991:647PoleJA,DeveridgeDL.ApproximateMolecularOrbitalTheory,McGraw-Hill.1970:20-858王志中,李向东.半经验分子轨道理论实践,北京:科学出版社,1981:629郭进,邓希敏,黄津梨等.化学物理学根,1994;179(6):546
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