A EVALUATION OF CRITICAL STRESS OF Si CRYSTAL

Chin J Mater Res

1995, Vol. 9

Issue (5): 391-394 DOI:

Current Issue | Archive | Adv Search

A EVALUATION OF CRITICAL STRESS OF Si CRYSTAL

DUAN Pei(Hunan Institute of Education)

Cite this article:

DUAN Pei(Hunan Institute of Education). A EVALUATION OF CRITICAL STRESS OF Si CRYSTAL. Chin J Mater Res, 1995, 9(5): 391-394.

Download:

PDF(1018KB)
Export: BibTeX | EndNote (RIS)

Abstract The critical stress τc. to drive dislocations for the stress field generated either by micro indentations or oxygen precipitates in Si crystals is researched. The results show that the indentating or the oxygen precipitate with a group of near dislocation

Key words: dislocation critical resolved shear stress silicon crystal

Received: 25 October 1995

	Service

	E-mail this article
	Add to citation manager
	E-mail Alert
	RSS
	（）
	Articles by authors

URL:

https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y1995/V9/I5/391

1KablerMN．PhysRevs,1963;131:542MeierenES．JApplPhys,1965;36:14973刘振茂等物理学报,1966;22;10774RindnerW,TranposchRF．JApplPhys,1963;34:7585MaherOMetal,JApplPhys,1976;47:38136TanTY,TiceWK,PhilosMag,1976;34:6157TimoshenkoS,GoodierJN,TheoryofElasticity,3rd,McGraw—Hill,N．Y19618HirthJP,LetheJ,TheoryofDislocations,Johnwiley&SonsInc．N．Y．19829HelmutWF,SiliconSemiconductorData,PergamonPress,1969

No related articles found!

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Shared

Discussed