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| STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFT |
| XIONG Shaozhen; ZHANG Jiangiun; ZHOU Zhenhua; MENG Zhiguo; DAI Yongping;GU Chunzhi; MA Jingtao; DING Shibin; ZHAO Gengshen(Institute of Thin Film Devices and Technology. Nankai University)(Institute of Tian Ma Microelectronics; Shenzhen) |
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Cite this article:
XIONG Shaozhen; ZHANG Jiangiun; ZHOU Zhenhua; MENG Zhiguo; DAI Yongping;GU Chunzhi; MA Jingtao; DING Shibin; ZHAO Gengshen(Institute of Thin Film Devices and Technology. Nankai University)(Institute of Tian Ma Microelectronics; Shenzhen). STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFT. Chin J Mater Res, 1994, 8(3): 257-262.
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Abstract Ta2O5 used in double-layer gate insulator a-Si TFT is formed by anodizing Ta. its process is compatible with fabricating process of TFT and its performance is excellent. We use citric acid solution as electrolyte and constant-current source as the power.
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Received: 25 June 1994
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| 1OkitaT,SID’90Digest1990;4412孟志国,张建军,周帧华等,第六届全国非品物理文集,桂林1991;1073张建军,南开大学硕士生毕业论文,19924熊绍珍,孟志国,戴永平等．半导体学报,1994年;15(2):1305PowellMJ,MRS’84,Proceedings,1984;33:5296LecomberPG,SpearWE．ElectronicsLetters,1979;15:1797进子英二著,刘维民译,液晶电视机,江苏科学技术出版社,1990:239 |
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