Chin J Mater Res  1988, Vol. 2 Issue (4): 69-75    DOI:

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PROPERTIES AND HYDROGENATION OF BORON DOPED SILICON FILMS BY LPCVD

YAO Jie;ZHANG Peixian(Zhongshan University)N.Du(Canada Univ.of West Ontario)K.P.Chik(Chinese Univ.of Hong Kong)

YAO Jie;ZHANG Peixian(Zhongshan University)N.Du(Canada Univ.of West Ontario)K.P.Chik(Chinese Univ.of Hong Kong). PROPERTIES AND HYDROGENATION OF BORON DOPED SILICON FILMS BY LPCVD. Chin J Mater Res, 1988, 2(4): 69-75.

Abstract References Related Articles Recommended Metrics Download:  PDF(534KB)  Export:  BibTeX | EndNote (RIS)       Abstract  In this paper the structural and physical analysis of boron doped siliconfilms produced by LPCVD are reported.It is found that in these materialsthere are three different structural phase zones:amorphous(a-Si),amorphousalloy(a-Si:B)and amorphous-microcrys Received:  25 August 1988      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1988/V2/I4/69 1 J Yao et al.In:Proceedings of the eighteenth IEEE photovoltaic specialists conf.,Nevada,Las Vegas,Oct.21-25,1985:1116 2 John P K,Tong B Y,Wang S K and Chik K B,Method of making highly stable modified a-Si and a-Ge film,U.S.Patent No.4 402 762,1982 3 Spear W E,LeComber P G,phil Mag,1976;B_33:935 4 Greenbaun S G,Carlos W E,Taylor P C,J Appl Phys 1984;56(6) :1874 5 Magarino J,Kaplan D,Ftiderich A and Denevilie A,Phil Mag,1982;B_45(3) :285 6 Kamins T I,J Electroche Soc,1980;127(3) :686 7 Smith R A,Semiconductors,Second edition,Chambridge Univ.Press,1978:155 8 Beyer W and Overhof H,In:Jacques I.Penkove ed.Semiconductor and Semimetals,New York:Academic Press Inc.,Vol.21,Part C,1984:257 No related articles found! No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed