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材料研究学报  1990, Vol. 4 Issue (2): 113-120    
  研究论文 本期目录 | 过刊浏览 |
半导体超晶格、量子阱材料的进展
熊家炯;朱嘉麟
清华大学;清华大学
PROGRESS OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM WELL MATERIALS
XIONG Jiajiong;ZHU Jialin(Tsinghua University)
引用本文:

熊家炯;朱嘉麟. 半导体超晶格、量子阱材料的进展[J]. 材料研究学报, 1990, 4(2): 113-120.
, . PROGRESS OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM WELL MATERIALS[J]. Chin J Mater Res, 1990, 4(2): 113-120.

全文: PDF(782 KB)  
摘要: 本文回顾了超晶格概念的提出及材料制备技术的进展;描述了半导体超晶格,量子阱材料的物理图象和基本特性,及其相关元器件的重要意义;综述了当前半导体超晶格,量子阱材料的研究进展及其应用,包括:(1)异质结构;(2)调制掺杂;(3)渐变带隙及带隙工程;(4)应变层超晶格;(5)新概念及新效应探索。文末概述了作者在量子阱超晶格材料的设计与性能预测方面进行的一些工作。
关键词 超晶格量子阱半导体器件    
Abstract:The concept of superlattice and the advance of the specimen prepsring tech-niques has been reviewed.The basic physical features of semiconductor superlattices andquantum wells have been shown.Developments and applications of semiconductorsuperlattices and
Key wordssuperlattices    quantum-wells    semiconductor devices
收稿日期: 1990-04-25     
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