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材料研究学报  1992, Vol. 6 Issue (6): 523-527    
  研究论文 本期目录 | 过刊浏览 |
纳米非晶 Si_3N_4固体结构和键合特征
张立德;王涛;蔡树芝;牟季美
中国科学院固体物理研究所;研究员合肥市230031;中国科学院固体物理研究所;中国科学院固体物理研究所;中国科学技术大学
STRUCTURE AND BOND CHARACTERIZATION OF THE NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLID
ZHANG Lide;WANG Tao;CAI Shuzhi(Institute of Solid State Physics;Academia Sinica)MOU Jimei(University of Science and Technology of China)
引用本文:

张立德;王涛;蔡树芝;牟季美. 纳米非晶 Si_3N_4固体结构和键合特征[J]. 材料研究学报, 1992, 6(6): 523-527.
, , , . STRUCTURE AND BOND CHARACTERIZATION OF THE NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLID[J]. Chin J Mater Res, 1992, 6(6): 523-527.

全文: PDF(514 KB)  
摘要: 本文用X 射线径向分布函数、电镜观察、X 射线电子能谱和X 射线衍射图谱较系统地研究了纳米Si_3N_4固体。结果表明,纳米非晶Si_3N_4在25—1300℃热处理后颗粒没有明显长大,界面组分仍然占有相当大的比例,保持纳米非晶态基本特征、界面为一种新型短程序,Si—N 键配位严重不足,Si 悬键较多。纳米Si_3N_4键结构不是典型的共价键。高于400℃退火,氧化明显,试样表面有SiO_2生成。
关键词 纳米态不饱和配位短程序    
Abstract:The nanometer-sized silicon nitride solids(NANO-SNS),heated-treated atdifferent conditions,were systematically studied in terms of X-ray patterns and TEM observa-tions.The basic characterizations of the structure and the bond for NANO-SNS were re-vealed.T
Key wordsnanometer state    unsaturated coordination numbers    short-range order
收稿日期: 1992-12-25     
1 Zhang L D,et al.Submitted to J Non-Crystalline Solids(accepted)
2 Birringer R,Gleiter H,Klein H P et al.Phys Lett,1984;102A:365
3 Aiyama T,Fukunage T,Niihara K et al.J Non-crystalline Solids,1979;33:131
4 Yin Z,smith F W.J Non-crystalline Solids,1989:114:489
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