材料研究学报  1997, Vol. 11 Issue (4): 357-362

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Sol-Gel法制备ZrO_2-SnO_2薄膜的常温气敏机理

方国家;刘祖黎;张杰;姚凯伦

华中理工大学;华中理工大学;华中理工大学;中国科学院国际材料物理中心

ROOM TEMPERATURE GAS SENSING MECHANISM OF SnO_2-ZrO_2 THIN FILMS PREPARED BY THE SOL-GEL TECHNIQUE

FANG Guojia; LIU Zuli; ZHANG Jie (Huazhong Univ. ofSci. & Tech.)YAO Kailun (International Center For Malerial Physics; Chinese Academy of Sciences)

方国家;刘祖黎;张杰;姚凯伦. Sol-Gel法制备ZrO_2-SnO_2薄膜的常温气敏机理[J]. 材料研究学报, 1997, 11(4): 357-362.
, , , . ROOM TEMPERATURE GAS SENSING MECHANISM OF SnO_2-ZrO_2 THIN FILMS PREPARED BY THE SOL-GEL TECHNIQUE[J]. Chin J Mater Res, 1997, 11(4): 357-362.

摘要 参考文献 相关文章 Metrics 全文: PDF(395 KB)   摘要: 根据Sol-Gel工艺制备的ZrO2-SnO2薄膜的气敏性能数据,提出了常温下SnO2(ZrO2)薄膜对H2S的气敏机理模型.根据此模型所得定量分析结果与实验结果一致. 关键词 ： sol-gel工艺,  ZrO_2-SnO_2薄膜,  常温气敏机理,  响应恢复特性     Abstract：According to the experimental results of gas sensing properties of SnO2(ZrO2) thin films prepared by the Sol-Gel technique. a sensing mechanism model for SnO2(Zro2) thin films to H2S at room temperature was proposed. With this model, the quantitative resu Key words： ZrO2-SnO2 thin film Sol-gel technique gas sensing mechanism model at room temperature response and recovery behaviour 收稿日期: 1997-08-25      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 方国家 刘祖黎 张杰 姚凯伦 44.8K 链接本文: https://www.cjmr.org/CN/      或      https://www.cjmr.org/CN/Y1997/V11/I4/357 1.沈瑜生.半导体学报5(3),301(1984) 2. S.R.Morrison. Sensors and Actuators、 12. 425(1987) 3.M.Ippomatsu, H.Sasaki, H.Yamagida.J.Mater.sci.25(1).259(1990) 4.H.Ohnishi, H.Sasaki. T.Matsumoto, M.Ippommatsu Sensors and Actuators B14(1-3). 677(1993) 5. G.J.Fang,Z.L.Liu, K.L.Yao. Phys.Stat.Sol.(a), 156(1), 81(1996) 6.M.Ippommatsu,H.Ohnishi, H.Sasaki, T.Matsumoto, J.Appl.Phys.69(12),8368(1991) No related articles found! Viewed Full text Abstract Cited   Shared      Discussed