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材料研究学报  1998, Vol. 12 Issue (3): 233-238    
  研究论文 本期目录 | 过刊浏览 |
SiC单晶的生长及其器件研制进展
王引书;李晋闽;林兰英
中国科学院半导体研究所;北京市;100083;中国科学院半导体研究所;中国科学院半导体研究所
THE PROGRESS OF SiC SINGLE CRYSTAL GROWTH AND ITS DEVICES
WANG Yinshu; LI Jinmin; LIN Lanying (Institute of Semiconductors; The Chincse Academy of Sciences; Beijing 100083)
引用本文:

王引书;李晋闽;林兰英. SiC单晶的生长及其器件研制进展[J]. 材料研究学报, 1998, 12(3): 233-238.
, , . THE PROGRESS OF SiC SINGLE CRYSTAL GROWTH AND ITS DEVICES[J]. Chin J Mater Res, 1998, 12(3): 233-238.

全文: PDF(645 KB)  
摘要: SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景.本文综述了半导体SiC体单晶和薄膜的生长及其器件研制的概况.
关键词 SiC体单晶生长外延生长SiC器件    
Abstract:SiC is a material with large band gap, high thermal conductivity, high electron saturation velocity, high breakdown voltage and low dielectric constant. Its promising properties make it a attractive material for high-frequency, high-power, high-temperatur
Key wordsSiC single crystal growth    epilayer growth    SiC devices
收稿日期: 1998-06-25     
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