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材料研究学报  2002, Vol. 16 Issue (4): 413-417    
  论文 本期目录 | 过刊浏览 |
非晶Ag11In12Te26Sb51薄膜的结晶行为
刘波;阮昊;干福熹
中国科学院上海光学精密机械研究所
引用本文:

刘波; 阮昊; 干福熹 . 非晶Ag11In12Te26Sb51薄膜的结晶行为[J]. 材料研究学报, 2002, 16(4): 413-417.

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摘要: 采用初始化仪使非晶Ag11In12Te26Sb51薄膜结晶,利用差分扫描量热仪、X射线衍射和光学透过率的测量研究了非晶Ag11In12Te26Sb51薄膜的结晶行为。结果表明,非晶Ag11In12Te26Sb51膜的结晶温度约为210?C,熔化温度为481.7?C,结晶活化能Ea=2.07ev/atom;Ag11In12Te26Sb51膜的结晶动力学遵循成核和生长机理;在激光致相变过程中可能出现的晶相有AgSbTe2、AgInTe2、Sb和Ag2Te等相;Ag11In12Te26Sb51薄膜的结晶程度受初始化功率和转速的影响。
关键词 Ag11In12Te26Sb51透过率激光致相变    
Key words
收稿日期: 1900-01-01     
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