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材料研究学报  2007, Vol. 21 Issue (1): 62-66    
  论文 本期目录 | 过刊浏览 |
多层复合结构应变硅材料的生长和特性
梁仁荣  王敬  徐阳  许军  李志坚
引用本文:

梁仁荣; 王敬; 徐阳; 许军; 李志坚 . 多层复合结构应变硅材料的生长和特性[J]. 材料研究学报, 2007, 21(1): 62-66.

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摘要: 应用减压化学气相沉积技术,在弛豫Si0.7Ge0.3层/组分渐变Si1-xGex层/Si衬底这一多层复合结构的基础上制作了应变硅材料,其中组分渐变Si1-xGex层Ge的摩尔分数x从O线性增加到0.2.对该复合结构的性能进行了表征,由原子力显微镜和Raman光谱测试结果计算出应变硅层的表面粗糙度和应变度分别为4.12 nm和1.2%,材料中的位错密度为4×104cm-2.经受了高热开销过程后,应变硅层的应变度及其表面形貌基本上保持不变.
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收稿日期: 1900-01-01     
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