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材料研究学报  2004, Vol. 18 Issue (2): 219-224    
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硅单晶Czochralski法生长全局数值模拟II. 质量传递特性
重庆大学
Global simulation of silicon crystal Czochralski growth II. Characteristics of mass transfer
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No Author. 硅单晶Czochralski法生长全局数值模拟II. 质量传递特性[J]. 材料研究学报, 2004, 18(2): 219-224.

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收稿日期: 1900-01-01     
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