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材料研究学报  2003, Vol. 17 Issue (4): 401-407    
  论文 本期目录 | 过刊浏览 |
[Mn(en)3]2•Sn2Se4Te2的结构和光吸收性能
韩克飞; 夏芸;王平; 郭洪猷
北京化工大学
引用本文:

韩克飞; 夏芸; 王平; 郭洪猷 . [Mn(en)3]2•Sn2Se4Te2的结构和光吸收性能[J]. 材料研究学报, 2003, 17(4): 401-407.

全文: PDF(771 KB)  
摘要: 按照K2 Se: K2 Te2 : MnCl 2•4H2O : SnCl 2•2H2O : Se :乙二胺(en)= 3.8: 1 : 2 :2: 6: 270 的摩尔比配料,采用溶剂热法使原料混合物在180℃反应7d,得到黑色块状晶体[Mn(en)3]2•Sn2Se4Te2 。这种晶体具有半导体性质,属于三斜晶系,空间群为P ī, 晶胞参数,a = 0.91428(7) nm, b = 1.02781(7) nm, c = 1.15745(8) nm, α = 94.632(2)°, β= 100.944(2)°, γ= 115.918(1)°, V = 0.94382(12) nm3, Z = 1。晶体由[Mn(en)3]2+和(Sn2Se4Te2)4- 堆积而成。半导体[Mn(en)3]2•Sn2Se4Te2的光学能隙(Eg)为2.2 eV, 具有Zintl结构的特征。当温度低于190℃时,[Mn(en)3]2•Sn2Se4Te2晶体是稳定的。详细讨论了这类化合物的组成对晶体结构和光吸收性能的影响。
关键词 Mn(en)3]2•Sn2Se4Te2溶剂热法合成    
Key words
收稿日期: 1900-01-01     
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