硅基发光材料研究进展

材料研究学报

1997, Vol. 11

Issue (6): 601-611

研究论文

本期目录 | 过刊浏览

硅基发光材料研究进展

鲍希茂;宋海智

南京大学;南京大学

THE PRESENT RESEARCH AND THE DEVELOPMENT OF Si-BASED LIGHT-EMITTING MATERIALS

BAO Ximao;SONG Haizhi (Nanjing University)

引用本文:

鲍希茂;宋海智. 硅基发光材料研究进展[J]. 材料研究学报, 1997, 11(6): 601-611.
, . THE PRESENT RESEARCH AND THE DEVELOPMENT OF Si-BASED LIGHT-EMITTING MATERIALS[J]. Chin J Mater Res, 1997, 11(6): 601-611.

全文: PDF(1829 KB)

摘要: 硅基发光材料是光电子集成的基础材料。发光多孔硅是硅基发光材料的一个新进展,已实现了硅基光电子集成,随着多孔硅研究的深化和纳米科学的发展,硅基发光材料正向纳米方向开拓。与此同时,在新的理论认识与技术条件下,硅材料改性,杂质发光,缺陷工程和硅基异质外延也呈现出新的发展趋势。硅基发光材料的发光波段已覆盖了从红外,可见到紫外的宽阔范围,正在为全色显示和光电子集成奠定材料和技术基础。

关键词 ：发光材料, 光电子学, 多孔硅, 低维材料

Abstract：Si-based light-emitting materials are fundamental in optoelectronic integration. A new stage of Si-based light-emitting materials was created by luminescent porous Si, from which optoelectronic integration was firstly realized. With deepened research of p

Key words： light-emitting material optoelectronics porous silicon low-dimersional material

收稿日期: 1997-12-25

基金资助:国家自然科学基金!5943202

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1 L.T. Canham, MRS Bull. 18, 22(1993)
2 Y.H.Xie, E.A.Fitzgera1d, Y. J. Mii, J. Appl. Phys. 70, 3223 (1991)
3 L.T.Canham, K.G.Barraclouch, D. J. Robbins, Appl. Phys. lett. 51, 1509(1987)
4 H.Kromer, J.Cryst. Growth 81, 193 (1987)
5 L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
6 A. Uhlir, Bell System Tech. J. 35, 333 (1956)
7 C.Pickering, M.I.J.Beale, D.J.Robbins, P.J.Pearson, R.Greef, J.Phys. C17, 6535 (1984)
8 鲍希茂,闫锋, 柳承恩,郑祥钦,王路春,朱健民,李齐,半导体学报,14(5), 322 (1993)
9 X.Q.Zheng, C.E.Liu, X.M.Bao, F.Yan, H.C.Yang, H.C.Chen, X. L. Zheng, Solid State Commun. 87, 1005 (1993)
10 F.Koch, V.Petrovax-Koch, T.Muschik, A.Nikolov, V. Gavrilenko, MRS Proc. 283, 197 (1992)
11V.Lehman, U. Gosele, Appl. Phys. Lett. S8, 856 (1991)
12 G.D.Sanders, Y. C. Chang, Phys. Rev. B 45, 9202 (1992)
13 S.Y.Ren, Phys. Rev. B 55, 4665 (1997)
14 F.S.Xue, X.M.Bao, F. Yan, J. App1. Phys. 81, 3 175 (1997)
15 G.G.Qin, Y.Q.Jia, Solid State Commun. 86, 559 (1993)
16 V.Petrova-Koch, T.Muschik, A.Kux, B.K.Meyer, F.Koch, V.Lehmann, Appl. Phys. Lett. 61, 943 (1992)
17 L.Tsybeskov, S.P.Duttagupta, K.P.Hirschman, P.M.Fauchet, Appl. Phys. Lett. 68, 2058 (1996)
18 X.M.Bao, H. Q. Yang, Appl. Phys. Lett. 63, 2246 (1993)
19 X. M. Bao, H. Q. Yang, F. Yan, J. Appl. Phys. 79, 1320 (1996)
20 K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, P. M. Fauchet, Nature 384, 338 (1996)
21 F. Yan, X. M. Bao, X. W. Wu, H. L. Chen, Appl. Phys. Lett. 67(23), 3471(1995)
22 F. Q. Liu, L. S. Liao, G. H. Wang, G. X. Cheng, X. M. Bao, Phys. Rev. Lett. 76, 604 (1996)
23 S.Nakamura, T.Mukai, M. Seroh, Appl. Phys. Lett. 64, 1687 (1994)
24 M.Ikeda, H. Matsunami, T. Tanaka, Phys. Rev. B 22, 2842 (1980)
25 L. S. Liao, X. M. Bao, Z. F. Yang, N. B. Min, Appl. Phys. Lett. 66, 2382 (1995)
26 X. M. Bao, L. S. Liao, N. S. Li, N. B. Min, Y. H. Gao, Z. Zhang, Nucl. Instr. Meth. in Phys. Res. B 119, 505(1996)
27 D. J. Dimaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, S.D. Brorson, J. Appl. Phys. 56, 401 (1984)
28 H. Takagi, H. Ogawa, Y. Yamazaki, A. Isnizaki, T. Nakagiri, Appl. Phys. Lett. 56, 2379 (1990)
29 P. Mutti, G. Ghisloti, S. Bertoni, L. Bonoldi, G. F. Cerofolni, L. Meda, E. Grilli, M. Guzzi, Appl. Phys. Lett. 66,851 (1995)
30 L. S. Liao, X. M. Bao, N. S. Li, X. Q. Zheng, N. B. Min, J. Luminescence 68, 199 (1996)
31 T. Gao, X. M. Bao, F. Yan, S. Tong, Acta Physics Sinica. 6, 466(1997)
32 V. G. Baru, A. P. Chernushich, V. A. Luzanov, G. V. Stepanov, L. Y. Zakharov, K. P. O'Donnell, I. V. Bradley,N. N. Melnik, Appl. Phys. Lett. 69, 4148 (1996)
33 Y. Maeda, Phys. Rev. B 51, 1658 (1995)
34 Y. Kanemitsu, H. Uto, Y. Masumoto, Y. Maeda, Appl. Phys. Lett. 61, 2187 (1992)
35 S. Tong, X. N. Liu, X. M. Bao, Appl. Phys. Lett. 66, 469 (1994)
36 Y. Kanemitsu, K. Suzuki, S. Kyushin, H. Masumoto, Phys. Rev. B 51, 13103 (1995)
37 Y. Iwasa, T. Koda, S. Koda, Synth. Meth. 55, 3033 (1993)
38 A. P. Alivisatos, Science 271, 933 (1996)
39 U. Gnutzman, K. Clauselker, Appl. Phys. 3, 9 (1974)
40 U. Menczigar, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, E. Kasper, Phys. Rev. B 47, 4099(1993)
41 S. Tong, X. N. Liu, X. M. Bao, Appl. Phys. Lett. 66, 469 (1995)
42 L. S. Liao, X.M. Bao, X.Q. Zheng, N.S. Li, N.B. Min, Appl. Phys. Lett. 68, 850 (1996)
43 H.Z.Song, X. M. Bao, Phys. Rev. B 55, 6988 (1997)
44 T. Gao, X. M. Bao, F. Yan, S. Tong, Phys. Lett. A (in press)
45 P. N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi, M. Gauneau, Jpn. J. Appl. Phys. 29, L524 (1990)
46 M. A. Marcus, A. Ploman, J. Non-Cryst. Solids 136, 260 (1991)
47 H. Liu, A. C. Frenkel, J. G. Kim, R. M. Park, J. Appl. Phys. 74, 6124 (1993)
48 H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994)
49 I.Akasaki, H.Amano, Y.Koide, K.Hiramatsu, N .sawaki, J.Cryst.Growth 98, 209(1989)

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