材料研究学报  1997, Vol. 11 Issue (2): 158-162

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含氧量对NiO_x薄膜光电特性的影响

傅竹西;林碧霞;韩宪泽;廖桂红

中国科技大学;中国科技大学;中国科技大学;中国科技大学

THE PHASE TRANSITION AND PHOTOELECTRONIC PROPERTIES OF NiO_x THIN FILMS

FU Zhuxi; LIN Bixia; HAN Xianzhe; LIAO Guihong (University of Science and Technology of China)

傅竹西;林碧霞;韩宪泽;廖桂红. 含氧量对NiO_x薄膜光电特性的影响[J]. 材料研究学报, 1997, 11(2): 158-162.
, , , . THE PHASE TRANSITION AND PHOTOELECTRONIC PROPERTIES OF NiO_x THIN FILMS[J]. Chin J Mater Res, 1997, 11(2): 158-162.

摘要 参考文献 相关文章 Metrics 全文: PDF(407 KB)   摘要: 采用直流溅射方法制备了厚度小于0.1μm的NiOx薄膜,研究薄膜的加热氧化及其光电特性,测量了它们的透射光谱和电阻率随薄膜中的氧含量及热处理温度的变化 关键词 ： NiOx薄膜,  加热氧化,  光电特性     Abstract：The thin films of NiOx, which thickness smaller than 0.1μm,were prepared by reactive sputtering of a Ni target with a mixed gas of argon and oxygen. The samples then were heated in air. It was found that the transmissivity and conductivity of the samples Key words： thin film of NiO_x oxidation photoelectronic properties 收稿日期: 1997-04-25      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 傅竹西 林碧霞 韩宪泽 廖桂红 44.8K 链接本文: https://www.cjmr.org/CN/      或      https://www.cjmr.org/CN/Y1997/V11/I2/158 1.L.A.Ryabov, In Current Topics iH Materials Science,Vol7, Chapter 5, edited by E.Kaldis(Nort—Holland Pub-lishing Company 1981) 2.曾文光,张进修,林长净材料导报6,60(1992) 3.H. L M. Chang, Y Gao, T.J. Zhang, Thin Solid Films. 216, 4(1992) 4.Mercy Thomas,Elzabeth E Chain.Thin Solid Films.204,11(1991) 5.S. Shin, Y Tezuka, T Kinoshita, Physical Review B 46, 9224(1992) 6.V S. Pankajakshan, K. Neelakandan, Thin Solid Films.215, 196 (1992) 7.R. T Patil, N B. Patil, A. P Kashid, Mat Res Bull.25, 57(1990) 8.Atsuko Iida,Reiji Nishikawa.1.Appl.Phys.33,3952(1994) No related articles found! Viewed Full text Abstract Cited   Shared      Discussed