材料研究学报  1988, Vol. 2 Issue (4): 69-75

研究论文 本期目录 | 过刊浏览 |

LPCVD法制备硼掺杂硅薄膜特性及氢化

姚杰;章佩娴;N.Du;K.P.Chik

中山大学;中山大学;加拿大西安大略大学;香港中文大学

PROPERTIES AND HYDROGENATION OF BORON DOPED SILICON FILMS BY LPCVD

YAO Jie;ZHANG Peixian(Zhongshan University)N.Du(Canada Univ.of West Ontario)K.P.Chik(Chinese Univ.of Hong Kong)

姚杰;章佩娴;N.Du;K.P.Chik. LPCVD法制备硼掺杂硅薄膜特性及氢化[J]. 材料研究学报, 1988, 2(4): 69-75.
, , , . PROPERTIES AND HYDROGENATION OF BORON DOPED SILICON FILMS BY LPCVD[J]. Chin J Mater Res, 1988, 2(4): 69-75.

摘要 参考文献 相关文章 Metrics 全文: PDF(534 KB)   摘要: 本文报告了LPCVD 制备的掺硼硅薄膜结构和物理性质分析,发现掺杂比R 在1×10~(-5)—4×10~(-2)的范围内,材料可划分为三种不同的相结构区:非晶态硅(a-Si)、非晶态硅-硼合金(a-Si∶B)和非晶态微晶硅(μc-Si)。物理性质测量也发现三种不同的结构区具有不同的特性和氢化规律。在a-Si∶B 区,霍尔系数符号是空穴导电的正号,而μc-Si 区材料进入简并状态。氢化明显地改善了材料的物理性质和掺杂效率,但对于重掺杂微晶区材料,氢化似乎使掺杂效率降低。 Abstract：In this paper the structural and physical analysis of boron doped siliconfilms produced by LPCVD are reported.It is found that in these materialsthere are three different structural phase zones:amorphous(a-Si),amorphousalloy(a-Si:B)and amorphous-microcrys 收稿日期: 1988-08-25      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 姚杰 章佩娴 N.Du K.P.Chik 44.8K 链接本文: https://www.cjmr.org/CN/      或      https://www.cjmr.org/CN/Y1988/V2/I4/69 1 J Yao et al.In:Proceedings of the eighteenth IEEE photovoltaic specialists conf.,Nevada,Las Vegas,Oct.21-25,1985:1116 2 John P K,Tong B Y,Wang S K and Chik K B,Method of making highly stable modified a-Si and a-Ge film,U.S.Patent No.4 402 762,1982 3 Spear W E,LeComber P G,phil Mag,1976;B_33:935 4 Greenbaun S G,Carlos W E,Taylor P C,J Appl Phys 1984;56(6) :1874 5 Magarino J,Kaplan D,Ftiderich A and Denevilie A,Phil Mag,1982;B_45(3) :285 6 Kamins T I,J Electroche Soc,1980;127(3) :686 7 Smith R A,Semiconductors,Second edition,Chambridge Univ.Press,1978:155 8 Beyer W and Overhof H,In:Jacques I.Penkove ed.Semiconductor and Semimetals,New York:Academic Press Inc.,Vol.21,Part C,1984:257 No related articles found! Viewed Full text Abstract Cited   Shared      Discussed