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| C- V CHARACTERISTICS OF MIS STRUCTURES WITH LANGMURI-BLODGETT POLYIMIDE FILMS |
| LIN Hat'an ;WU Chongruo(Southeast University) |
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Cite this article:
LIN Hat'an ;WU Chongruo(Southeast University). C- V CHARACTERISTICS OF MIS STRUCTURES WITH LANGMURI-BLODGETT POLYIMIDE FILMS. Chin J Mater Res, 1994, 8(1): 88-92.
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Abstract C-V technology is an effective method of studing semiconductor interfaCe. This paper will rePort some interesting new results of C-V characteristics which are obtained from MIS tunnel junction with LB insulting films.The substrates used in present resear
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Received: 25 February 1994
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| 1KarS,DahlkeWEetal．Solid-StateELECTRONICS1972;15:2212GreenMAShewchenJJApplPhys,1975;45:5853林海安,吴冲若,石一心．TFC’91全国薄膜学术会议论文集北京,19914郭维廉,Si—SiO2界面物理．北京:国防工业出版社,1982:515GreenMA,KingFD,SbewchenJ．Solid—StateElectronics,1974;17:551 |
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